3-D edge-element analysis for the scattering characteristics of II-VI semiconductor materials with gaps

Xinqing Sheng; Shanjia Xu; P. Greiner; C. R. Becker; R. Geick

3-D edge-element analysis for the scattering characteristics of II-VI semiconductor materials with gaps

Xinqing Sheng^*, Shanjia Xu, P. Greiner, C. R. Becker, R. Geick

^*此作品的通讯作者

University of Science and Technology of China

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The scattering characteristics of II-VI semiconductor materials filled in the waveguide with gaps were analyzed by using the 3-D edge-element method. Since the method starts from the variation of functional directly, it avoids the difficulties met in other methods in solving the eigenvalue and eigenfunction for very-thin lossy dielectric loaded waveguide. The comparisons between the calculated results and the experimental data confirm the effectiveness, reliability and accuracy of the method.

源语言	英语
页（从-至）	401-406
页数	6
期刊	Kang T'ieh/Iron and Steel (Peking)
卷	31
期	11
出版状态	已出版 - 11月 1996
已对外发布	是

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Sheng, X., Xu, S., Greiner, P., Becker, C. R., & Geick, R. (1996). 3-D edge-element analysis for the scattering characteristics of II-VI semiconductor materials with gaps. Kang T'ieh/Iron and Steel (Peking), 31(11), 401-406.

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title = "3-D edge-element analysis for the scattering characteristics of II-VI semiconductor materials with gaps",

abstract = "The scattering characteristics of II-VI semiconductor materials filled in the waveguide with gaps were analyzed by using the 3-D edge-element method. Since the method starts from the variation of functional directly, it avoids the difficulties met in other methods in solving the eigenvalue and eigenfunction for very-thin lossy dielectric loaded waveguide. The comparisons between the calculated results and the experimental data confirm the effectiveness, reliability and accuracy of the method.",

author = "Xinqing Sheng and Shanjia Xu and P. Greiner and Becker, {C. R.} and R. Geick",

year = "1996",

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AU - Sheng, Xinqing

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AU - Greiner, P.

AU - Becker, C. R.

AU - Geick, R.

PY - 1996/11

Y1 - 1996/11

N2 - The scattering characteristics of II-VI semiconductor materials filled in the waveguide with gaps were analyzed by using the 3-D edge-element method. Since the method starts from the variation of functional directly, it avoids the difficulties met in other methods in solving the eigenvalue and eigenfunction for very-thin lossy dielectric loaded waveguide. The comparisons between the calculated results and the experimental data confirm the effectiveness, reliability and accuracy of the method.

AB - The scattering characteristics of II-VI semiconductor materials filled in the waveguide with gaps were analyzed by using the 3-D edge-element method. Since the method starts from the variation of functional directly, it avoids the difficulties met in other methods in solving the eigenvalue and eigenfunction for very-thin lossy dielectric loaded waveguide. The comparisons between the calculated results and the experimental data confirm the effectiveness, reliability and accuracy of the method.

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SN - 0449-749X

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3-D edge-element analysis for the scattering characteristics of II-VI semiconductor materials with gaps

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