混合介质层类同轴垂直硅通孔的高频性能研究

Yingtao Ding; Yiding Wang; Lei Xiao; Qining Wang; Zhiwei Chen

doi:10.15918/j.tbit1001-0645.2018.279

混合介质层类同轴垂直硅通孔的高频性能研究

Yingtao Ding, Yiding Wang, Lei Xiao, Qining Wang, Zhiwei Chen

集成电路与电子学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

To improve high-frequency characteristics of Through Silicon Via (TSV) interposer in T/R modules, a coaxially shielded TSV with mixed dielectric layer was proposed in this paper, involving novel structure and simple fabrication process. The parameters such as the number of ground TSV, the diameter of TSV, and the thickness of the mixed dielectric layer were simulated and optimized. Compared with traditional coaxial TSV, the coaxially shielded TSV with mixed dielectric layer shows excellent RF transmission performance including return loss, insertion loss and crosstalk in 1~45 GHz frequency range.

投稿的翻译标题	Study on High Frequency Characterizations of Coaxially Shielded TSV with Mixed Dielectric Layer
源语言	繁体中文
页（从-至）	1103-1108
页数	6
期刊	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
卷	41
期	10
DOI	https://doi.org/10.15918/j.tbit1001-0645.2018.279
出版状态	已出版 - 10月 2021

关键词

Coaxially shielded
Mixed dielectric layer
T/R module
Through-silicon-via

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10.15918/j.tbit1001-0645.2018.279

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链接到 Scopus 的出版物

引用此

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AU - Wang, Yiding

AU - Xiao, Lei

AU - Wang, Qining

AU - Chen, Zhiwei

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N2 - To improve high-frequency characteristics of Through Silicon Via (TSV) interposer in T/R modules, a coaxially shielded TSV with mixed dielectric layer was proposed in this paper, involving novel structure and simple fabrication process. The parameters such as the number of ground TSV, the diameter of TSV, and the thickness of the mixed dielectric layer were simulated and optimized. Compared with traditional coaxial TSV, the coaxially shielded TSV with mixed dielectric layer shows excellent RF transmission performance including return loss, insertion loss and crosstalk in 1~45 GHz frequency range.

AB - To improve high-frequency characteristics of Through Silicon Via (TSV) interposer in T/R modules, a coaxially shielded TSV with mixed dielectric layer was proposed in this paper, involving novel structure and simple fabrication process. The parameters such as the number of ground TSV, the diameter of TSV, and the thickness of the mixed dielectric layer were simulated and optimized. Compared with traditional coaxial TSV, the coaxially shielded TSV with mixed dielectric layer shows excellent RF transmission performance including return loss, insertion loss and crosstalk in 1~45 GHz frequency range.

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混合介质层类同轴垂直硅通孔的高频性能研究

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