钱 锋

根据储存在 Pure 的刊物以及来自 Scopus 的引用文献数量计算
20012023

每年的科研成果

网络

Li Yanjun

  • Norwegian University of Science and Technology

外部人员

Chen Tangsheng

  • Nanjing Electronic Devices Institute
  • National Key Lab. of Monolithic Integrated Circuits and Modules
  • National Key Laboratory of Monolithic Integrated Circuits and Modules
  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

外部人员

Zheng Yuan

  • Nanjing Electronic Devices Institute
  • Nanjing Guobo Electronics Co., Ltd

外部人员

Zheng Weibin

  • Nanjing Electronic Devices Institute
  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

外部人员

Li Fuxiao

  • Nanjing Electronic Devices Institute

外部人员

Li Xiaopeng

  • Nanjing Electronic Devices Institute

外部人员

Shao Kai

  • Nanjing Electronic Devices Institute

外部人员

Chen Xinyu

  • Nanjing Guobo Electronics Co., Ltd
  • Nanjing Electronic Devices Institute

外部人员

Wu Jian

  • Nanjing Guobo Electronics Co., Ltd
  • Nanjing Electronic Devices Institute

外部人员

Jin Shenbao

  • Nanjing University of Science and Technology

外部人员

Mørtsell Eva A.

  • Norwegian University of Science and Technology

外部人员

Zhang Youtao

  • Nanjing Guobo Electronics Co., Ltd
  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
  • Nanjing Electronic Devices Institute

外部人员

Yang Lei

  • Nanjing Guobo Electronics Co., Ltd
  • Nanjing Electronic Devices Institute

外部人员

Sha Gang

  • Nanjing University of Science and Technology

外部人员

Zhong Shichang

  • National Key Laboratory of Monolithic Integrated Circuits and Modules
  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
  • Nanjing Electronic Devices Institute

外部人员

Wang Weibo

  • Nanjing Electronic Devices Institute
  • Southeast University, Nanjing
  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

外部人员

Ai Xuan

  • Nanjing Guobo Electronics Co., Ltd
  • Nanjing Electronic Devices Institute

外部人员

Chen Chen

  • Nanjing Electronic Devices Institute
  • National Key Laboratory of Monolithic Integrated Circuits and Modules
  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

外部人员

Tao Hongqi

  • Nanjing Electronic Devices Institute

外部人员

Zhang Mingshan

  • Beijing Institute of Technology
  • North China University of Science and Technology

外部人员

Rainforth W. Mark

  • University of Sheffield

外部人员

Zhao Dongdong

  • Norwegian University of Science and Technology
  • Tianjin University

外部人员

Chen Xiaojian

  • Nanjing Electronic Devices Institute
  • National Key Lab. of Monolithic Integrated Circuits and Modules

外部人员

Xie Chunxiao

  • Dongguan University of Technology

外部人员

Xu Bo

  • Nanjing Electronic Devices Institute

外部人员

Gong Hai Chao

  • Beijing Institute of Technology

外部人员

Liu Ao

  • Nanjing Electronic Devices Institute

外部人员

Jiang Youquan

  • Nanjing Electronic Devices Institute

外部人员

Xu Zheng Rong

  • Nanjing Electronic Devices Institute

外部人员

Zhang Min

  • Nanjing Electronic Devices Institute

外部人员

Wang Ziliang

  • Nanjing Electronic Devices Institute

外部人员

Chang Chuntao

  • Dongguan University of Technology

外部人员

Wang Jianguo

  • Dongguan University of Technology

外部人员

Xu Zhongchao

  • Nanjing Electronic Devices Institute

外部人员

Shen Hongchang

  • Guobo Electronics Co.,Ltd.
  • Ltd

外部人员

Gao Tao

  • National Key Laboratory of Monolithic Integrated Circuits and Modules
  • Nanjing Electronic Devices Institute

外部人员

Gao Yu

  • Beijing Institute of Technology

外部人员

Xu Bo

  • Nanjing Electronic Devices Institute

外部人员

Li Chunan

  • Norwegian University of Science and Technology

外部人员

Jiao Shilong

  • National Key Lab. of Monolithic Integrated Circuits and Modules
  • University of Electronic Science and Technology of China

外部人员

Ren Chunjiang

  • National Key Laboratory of Monolithic Integrated Circuits and Modules
  • Nanjing Electronic Devices Institute

外部人员

Cheng Wei

  • Nanjing Electronic Devices Institute

外部人员

Lu Haiyan

  • Nanjing Electronic Devices Institute

外部人员

Li W. Z.

  • Beijing Institute of Technology
  • Hong Kong Polytechnic University

外部人员

Ye Yutang

  • University of Electronic Science and Technology of China

外部人员

Sharp Joanne

  • University of Sheffield

外部人员

Guan Shaokang

  • Zhengzhou University

外部人员

Liu Jun

  • Hangzhou Dianzi University

外部人员

Han Jiaqiang

  • University of Science and Technology Beijing

外部人员

Jia Nan Nan

  • Beijing Institute of Technology

外部人员

Sun Jiaqing

  • Nanjing Electronic Devices Institute

外部人员

Wang Chujun

  • Nanjing Electronic Devices Institute

外部人员

Yao Shi

  • Nanjing Electronic Devices Institute

外部人员

Wang Duoduo

  • Beijing Institute of Technology

外部人员

Ying Haitao

  • Nanjing Electronic Devices Institute

外部人员

Zhao Yuan Yun

  • Norwegian University of Science and Technology
  • Dongguan University of Technology

外部人员

Zhu Xinjie

  • Beijing Institute of Technology
  • Ningbo Branch of China Academy of Ordnance Science
  • Chengdu Advanced Metal Materials Industrial Technology Research Institute Co. Ltd
  • Chinese Weapons Science Academy Ningbo Branch
  • Chinese Weapons Science Academy Ningbo Branch

外部人员

Liu Keli

  • Beijing Institute of Technology
  • Ltd.
  • CAS - Institute of Metal Research

外部人员

Pan Shiwei

  • Beijing Institute of Technology
  • Norwegian University of Science and Technology
  • University of Science and Technology Beijing

外部人员

Zhao Yinghong

  • Nanjing Electronic Devices Institute

外部人员

Wang Zhensheng

  • Nanjing Electronic Devices Institute

外部人员

Dai Lei

  • Nanjing Electronic Devices Institute

外部人员

Zhao Chengliang

  • Dongguan University of Technology

外部人员

Yang Xing

  • Nanjing Electronic Devices Institute

外部人员

Wang Bing

  • Beijing Institute of Technology
  • Ltd

外部人员

Li Xiaoqian

  • Nanjing Electronic Devices Institute

外部人员

Hao Longlong

  • Chongqing University

外部人员

Liu Ao

  • Nanjing Electronic Devices Institute

外部人员

Zhu Shizhen

  • Beijing Institute of Technology

外部人员

Li Zhuyan

  • Beijing Institute of Technology

外部人员

Yang Yang

  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
  • Nanjing Electronic Devices Institute

外部人员

Liu Yiming

  • Nanjing Electronic Devices Institute

外部人员

Yang Wen

  • China National Nuclear Corporation

外部人员

Zhou Jianming

  • Nanjing Electronic Devices Institute

外部人员

Shen Wenfeng

  • CAS - Ningbo Institute of Material Technology and Engineering

外部人员

Qu Junda

  • Nanjing Electronic Devices Institute

外部人员

Bai Xiangren

  • Tianjin University

外部人员

Wang Baowei

  • Nanjing Electronic Devices Institute

外部人员

Li Dawei

  • Guobo Electronics Co.,Ltd.

外部人员

Chen Xiaofeng

  • Tianjin University

外部人员

Liu Wei

  • Air Force Military Representative Office in Jiangsu Province

外部人员

Zhao Naiqin

  • Collaborative Innovative Centre of Chemical Science and Engineering
  • Tianjin University
  • Ministry of Education in China
  • Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)

外部人员

Wang Zhi Gong

  • Southeast University, Nanjing

外部人员

Xu Yang

  • Guobo Electronics Co.,Ltd.

外部人员

Wang Zi Dong

  • University of Science and Technology Beijing

外部人员

Yao Changfei

  • Nanjing Electronic Devices Institute

外部人员

Shi Chunshen

  • Tianjin University

外部人员

Yuan Jingjiu

  • Beijing Institute of Technology

外部人员

Zheng Y.

  • Beijing Institute of Technology

外部人员

Dou Yan Kun

  • Beijing Institute of Technology
  • China National Nuclear Corporation

外部人员

Yu Zhi Yuan

  • Jilin University

外部人员

Sui Huaiming

  • Yangzhou Fengming Photoelectric New Materials Co., LTD

外部人员

Zhu Jianhua

  • Nanjing Electronic Devices Institute

外部人员

Xiang Pin

  • Nanjing Electronic Devices Institute

外部人员

Xue Weitao

  • Nanjing Electronic Devices Institute

外部人员

Zha Min

  • Jilin University

外部人员

Su Haokai

  • Nanjing University of Science and Technology

外部人员

Jia Dongming

  • Nanjing Electronic Devices Institute

外部人员

He Xinfu

  • China National Nuclear Corporation

外部人员

Cao Haiyong

  • National Key Lab. of Monolithic Integrated Circuits and Modules

外部人员

Xue Chengpeng

  • Beijing Institute of Technology

外部人员

Zhang Lai Chang

  • Edith Cowan University

外部人员

Wang Yulin

  • Nanjing Electronic Devices Institute

外部人员

Lu Wenjun

  • Southern University of Science and Technology
  • Max Planck Institute for Iron Research

外部人员

Liu Weibing

  • Beijing Institute of Technology

外部人员

Hao Zhangwei

  • Guobo Electronics Co.,Ltd.

外部人员

Cao Kun

  • Nanjing Electronic Devices Institute

外部人员

Xu Qing

  • Nanjing Electronic Devices Institute

外部人员

Jin Saisai

  • Guobo Electronics Co.,Ltd.

外部人员

Zhang Bin

  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

外部人员

Li Jinyue

  • Beijing Institute of Technology

外部人员

Zhu Yanqing

  • Nanjing Guobo Electronics Co., Ltd
  • Nanjing Electronic Devices Institute

外部人员

Zhou Fengling

  • Dongguan University of Technology
  • Monash University

外部人员

Gu Xiaoyu

  • Nanjing Guobo Electronics Co., Ltd

外部人员

Cao Jinrong

  • Nanjing Electronic Devices Institute

外部人员

Chen Peidi

  • Nanjing Electronic Devices Institute

外部人员

Roven Hans J.

  • Norwegian University of Science and Technology

外部人员

Tang Feihong

  • Guobo Electronics Co.,Ltd.

外部人员

Feng Wei

  • Nanjing Electronic Devices Institute

外部人员

Wang Hui Yuan

  • Jilin University

外部人员

Chen Kai

  • Beijing Institute of Technology
  • China University of Petroleum - Beijing

外部人员

Yang Yuansheng

  • CAS - Institute of Metal Research

外部人员

Yu Xuming

  • Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

外部人员

Zhou Yizhou

  • CAS - Institute of Metal Research

外部人员

Mathiesen Ragnvald H.

  • Norwegian University of Science and Technology

外部人员

He Chunnian

  • Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)
  • Tianjin University
  • National University of Singapore

外部人员

Zhao Peng

  • Nanjing Electronic Devices Institute

外部人员

Xue Yu

  • Nanjing Electronic Devices Institute

外部人员

Yang Yanhong

  • CAS - Institute of Metal Research

外部人员

Tang Shijun

  • Nanjing Electronic Devices Institute

外部人员

Zhang Xiang

  • Tianjin University

外部人员

Liu Xiaoguang

  • University of Science and Technology Beijing

外部人员

Wang Zefeng

  • Beijing Institute of Technology

外部人员

Feng Ou

  • Nanjing Electronic Devices Institute

外部人员

Mao Pengcheng

  • Beijing Institute of Technology

外部人员

Ge Qin

  • Nanjing Electronic Devices Institute

外部人员

Zheng Y.

  • Beijing Institute of Technology
  • Harbin Engineering University
  • Peking University

外部人员

Tao J. M.

  • Kunming University of Science and Technology

外部人员

Zhou Wen Yong

  • Hangzhou Dianzi University

外部人员

Jiang Hao

  • Nanjing Electronic Devices Institute

外部人员

Wang Xiangbang

  • Nanjing Electronic Devices Institute

外部人员

Li Jiajun

  • Tianjin University

外部人员

Wang Rui qiang

  • Beijing Institute of Technology

外部人员