Weak gate effect in 1,3-benzenedithiol molecular device

Wen Yong Su; Yi Luo

doi:10.1088/0256-307X/27/4/048502

Weak gate effect in 1,3-benzenedithiol molecular device

Wen Yong Su^*, Yi Luo

^*Corresponding author for this work

School of Physics

KTH Royal Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.

Original language	English
Article number	048502
Journal	Chinese Physics Letters
Volume	27
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/27/4/048502
Publication status	Published - 2010

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Su, W. Y., & Luo, Y. (2010). Weak gate effect in 1,3-benzenedithiol molecular device. Chinese Physics Letters, 27(4), Article 048502. https://doi.org/10.1088/0256-307X/27/4/048502

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abstract = "We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.",

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AU - Su, Wen Yong

AU - Luo, Yi

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AB - We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.

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DO - 10.1088/0256-307X/27/4/048502

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JO - Chinese Physics Letters

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Weak gate effect in 1,3-benzenedithiol molecular device

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