Tolerance analysis of hyper numerical aperture lithography objective with freeform surfaces

Shanshan Mao, Yanqiu Li, Meng Zheng, Ke Liu, Lihui Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

To ensure the good performance of hyper-numerical-aperture (NA) freeform surfaces lithography objective, not only the aberration should be decreased as much as possible in theory design stage, but also all the tolerances should be allocated reasonably and controlled rigorously in the manufacturing process. Therefore, reasonable tolerance analysis for projection objective is needed to maximally make up for the image quality deterioration caused by manufacture and assembly errors. According to the variation sensitivity between Zernike aberration and the single tolerance, effective compensators for individual aberrations can be chosen during tolerance analysis. As an example the method is applied to the tolerance analysis for an NA1.2 catadioptric projection objective with freeform surfaces designed by us. The results show that, after tolerance analysis using the compensators selected by this method, the root mean square (RMS) wavefront error of the projection objective is less than 0.015λ (λ=193 nm) at 90% probability, which meets the image quality requirement of lithographic projection objective for 10 nm technology node.

Original languageEnglish
Title of host publicationSixth International Conference on Optical and Photonic Engineering, icOPEN 2018
EditorsChao Zuo, Yingjie Yu, Kemao Qian
PublisherSPIE
ISBN (Electronic)9781510622562
DOIs
Publication statusPublished - 2018
Event6th International Conference on Optical and Photonic Engineering, icOPEN 2018 - Shanghai, China
Duration: 8 May 201811 May 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10827
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference6th International Conference on Optical and Photonic Engineering, icOPEN 2018
Country/TerritoryChina
CityShanghai
Period8/05/1811/05/18

Keywords

  • Deep ultraviolet
  • Freeform surfaces
  • Hyper-NA
  • Lithography

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