Thermal distortion of EUV reticle during exposure

Peng Fei Zhou*, Yan Qiu Li, Yong Hong Shang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Extreme ultraviolet lithography (EUVL) is one of all candidate next-generation lithography technologies targeting 45 nm features, the industrial throughput should be more than 80 wafers-per-hour. As the throughput requirements are increased, the incident EUV power on reticle density rise. About 100% the incident power is absorbed by the absorber layer and 35% is absorbed by Mo/Si multi-layers to result in a significant thermal distortion in the reticle. Such effects can contribute to reticle-wafer overlay error, so it is necessary to quantify the reticle distortion. In this work, detailed three-dimensional thermal and structure models have been developed using finite element methods. The results show that the maximum in-plane distortion in x-y plane and z indirection are respectively about 1.11 nm and 0.26 nm when the sensitivity of the resist and the EUV power density are respectively 7 mJ/cm2 and 259.24 W/cm2, and they are respectively about 0.71 nm and 0.19 nm when the sensitivity and the power density are 5 mJ/cm2 and 184.38 W/cm2 respectively.

Original languageEnglish
Pages (from-to)21-24
Number of pages4
JournalWeixi Jiagong Jishu/Microfabrication Technology
Issue number4
Publication statusPublished - Aug 2006
Externally publishedYes

Keywords

  • EUVL
  • Exposure
  • Finite element method
  • Resist
  • Reticle
  • Thermal distortion

Fingerprint

Dive into the research topics of 'Thermal distortion of EUV reticle during exposure'. Together they form a unique fingerprint.

Cite this

Zhou, P. F., Li, Y. Q., & Shang, Y. H. (2006). Thermal distortion of EUV reticle during exposure. Weixi Jiagong Jishu/Microfabrication Technology, (4), 21-24.