The stitching error dependence of the resist pattern accuracy for electron beam projection lithography

Yanqiu Li*, Atsushi Yamada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The stitching error dependence of the resist pattern accuracy for electron beam projection lithography is presented. The terrace pair is employed to divide the pattern in order to control the uniformity of critical dimension (CD) within large stitching margin. The model of electron scatting is supposed in the simulation. The results show that the CD and pattern displacement are within budget if the overlapping and transverse shifting of pattern are controlled within ±20 and ±30 nm, respectively, for 100 nm node generation.

Original languageEnglish
Pages (from-to)163-170
Number of pages8
JournalMicroelectronic Engineering
Volume71
Issue number2
DOIs
Publication statusPublished - Feb 2004
Externally publishedYes

Keywords

  • Electron beam lithography
  • Microelectronic
  • Nanostructures
  • Stitching error

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Li, Y., & Yamada, A. (2004). The stitching error dependence of the resist pattern accuracy for electron beam projection lithography. Microelectronic Engineering, 71(2), 163-170. https://doi.org/10.1016/j.mee.2003.09.008