Abstract
The stitching error dependence of the resist pattern accuracy for electron beam projection lithography is presented. The terrace pair is employed to divide the pattern in order to control the uniformity of critical dimension (CD) within large stitching margin. The model of electron scatting is supposed in the simulation. The results show that the CD and pattern displacement are within budget if the overlapping and transverse shifting of pattern are controlled within ±20 and ±30 nm, respectively, for 100 nm node generation.
Original language | English |
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Pages (from-to) | 163-170 |
Number of pages | 8 |
Journal | Microelectronic Engineering |
Volume | 71 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2004 |
Externally published | Yes |
Keywords
- Electron beam lithography
- Microelectronic
- Nanostructures
- Stitching error
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Li, Y., & Yamada, A. (2004). The stitching error dependence of the resist pattern accuracy for electron beam projection lithography. Microelectronic Engineering, 71(2), 163-170. https://doi.org/10.1016/j.mee.2003.09.008