The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing

C. L. Heng; J. T. Li; W. Y. Su; Z. Han; P. G. Yin; T. G. Finstad

doi:10.1016/j.optmat.2014.12.013

The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing

C. L. Heng^*, J. T. Li, W. Y. Su, Z. Han, P. G. Yin, T. G. Finstad

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report on the formation of ytterbium (Yb) silicates and its photoluminescence (PL) properties for heavily Yb doped Si oxide films after various annealings. X-ray diffraction patterns and transmission electron microscopy indicate that different Yb silicates have formed in the oxides upon 1100 and 1200 °C annealing. The Yb PL intensities after the high temperature annealings are much stronger than those after lower temperatures, which indicates that the Yb silicates have higher emission efficiency than the Yb configurations found for lower temperature annealing. The PL intensities of the films can be altered considerably by secondary oxidizing or annealing in forming gas (N₂ + 7% H₂) ambience.

Original language	English
Pages (from-to)	17-23
Number of pages	7
Journal	Optical Materials
Volume	42
DOIs	https://doi.org/10.1016/j.optmat.2014.12.013
Publication status	Published - 1 Apr 2015
Externally published	Yes

Keywords

Energy transfer
Magnetron sputtering
Thermal annealing
Thin films
Yb silicates

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10.1016/j.optmat.2014.12.013

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title = "The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing",

abstract = "We report on the formation of ytterbium (Yb) silicates and its photoluminescence (PL) properties for heavily Yb doped Si oxide films after various annealings. X-ray diffraction patterns and transmission electron microscopy indicate that different Yb silicates have formed in the oxides upon 1100 and 1200 °C annealing. The Yb PL intensities after the high temperature annealings are much stronger than those after lower temperatures, which indicates that the Yb silicates have higher emission efficiency than the Yb configurations found for lower temperature annealing. The PL intensities of the films can be altered considerably by secondary oxidizing or annealing in forming gas (N2 + 7% H2) ambience.",

keywords = "Energy transfer, Magnetron sputtering, Thermal annealing, Thin films, Yb silicates",

author = "Heng, {C. L.} and Li, {J. T.} and Su, {W. Y.} and Z. Han and Yin, {P. G.} and Finstad, {T. G.}",

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doi = "10.1016/j.optmat.2014.12.013",

language = "English",

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TY - JOUR

T1 - The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing

AU - Heng, C. L.

AU - Li, J. T.

AU - Su, W. Y.

AU - Han, Z.

AU - Yin, P. G.

AU - Finstad, T. G.

PY - 2015/4/1

Y1 - 2015/4/1

N2 - We report on the formation of ytterbium (Yb) silicates and its photoluminescence (PL) properties for heavily Yb doped Si oxide films after various annealings. X-ray diffraction patterns and transmission electron microscopy indicate that different Yb silicates have formed in the oxides upon 1100 and 1200 °C annealing. The Yb PL intensities after the high temperature annealings are much stronger than those after lower temperatures, which indicates that the Yb silicates have higher emission efficiency than the Yb configurations found for lower temperature annealing. The PL intensities of the films can be altered considerably by secondary oxidizing or annealing in forming gas (N2 + 7% H2) ambience.

AB - We report on the formation of ytterbium (Yb) silicates and its photoluminescence (PL) properties for heavily Yb doped Si oxide films after various annealings. X-ray diffraction patterns and transmission electron microscopy indicate that different Yb silicates have formed in the oxides upon 1100 and 1200 °C annealing. The Yb PL intensities after the high temperature annealings are much stronger than those after lower temperatures, which indicates that the Yb silicates have higher emission efficiency than the Yb configurations found for lower temperature annealing. The PL intensities of the films can be altered considerably by secondary oxidizing or annealing in forming gas (N2 + 7% H2) ambience.

KW - Energy transfer

KW - Magnetron sputtering

KW - Thermal annealing

KW - Thin films

KW - Yb silicates

UR - http://www.scopus.com/inward/record.url?scp=84924160702&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2014.12.013

DO - 10.1016/j.optmat.2014.12.013

M3 - Article

AN - SCOPUS:84924160702

SN - 0925-3467

VL - 42

SP - 17

EP - 23

JO - Optical Materials

JF - Optical Materials

ER -

The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing

Abstract

Keywords

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