Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors

Xiao Wen Zhang; Dan Xie; Jian Long Xu; Cheng Zhang; Yi Lin Sun; Yuan Fan Zhao; Xian Li; Xin Ming Li; Hong Wei Zhu; Hua Mao Chen; Ting Chang Chang

doi:10.1016/j.carbon.2015.05.064

Temperature-dependent electrical transport properties in graphene/Pb(Zr_0.4Ti_0.6)O₃ field effect transistors

Xiao Wen Zhang, Dan Xie^*, Jian Long Xu, Cheng Zhang, Yi Lin Sun, Yuan Fan Zhao, Xian Li, Xin Ming Li, Hong Wei Zhu, Hua Mao Chen, Ting Chang Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We report the temperature and gate voltage dependent electrical properties of PZT gated graphene field effect transistors (PZT-GFETs) in the vacuum atmosphere. The PZT-GFETs exhibit p-type characteristics which are attributed to the chemical doping induced the Fermi level shifting below the Dirac point. Meanwhile, it also shows a large memory window. The temperature dependencies of the source-drain current in the range of 20-300 K indicate thermally activated hysteresis behaviors. The hysteresis in the transfer characteristics of PZT-GFETs shows a simultaneous enlargement with increasing temperature. The hysteresis appears to stem from the screening of charges that are transferred from graphene to traps at the interface of PZT and graphene. The magnitude of the charge neutrality point under opposite gate voltage sweep are enhanced with the increase of temperature and gate voltage can be ascribed to the common effects of the temperature and voltage magnitude dependent mechanisms such as interface charge trapping process and the polarization effects of PZT films.

Original language	English
Pages (from-to)	384-392
Number of pages	9
Journal	Carbon
Volume	93
DOIs	https://doi.org/10.1016/j.carbon.2015.05.064
Publication status	Published - 8 Aug 2015
Externally published	Yes

Access to Document

10.1016/j.carbon.2015.05.064

Cite this

@article{2e6e8349dc6f454bb50eceff4f216acf,

title = "Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors",

abstract = "We report the temperature and gate voltage dependent electrical properties of PZT gated graphene field effect transistors (PZT-GFETs) in the vacuum atmosphere. The PZT-GFETs exhibit p-type characteristics which are attributed to the chemical doping induced the Fermi level shifting below the Dirac point. Meanwhile, it also shows a large memory window. The temperature dependencies of the source-drain current in the range of 20-300 K indicate thermally activated hysteresis behaviors. The hysteresis in the transfer characteristics of PZT-GFETs shows a simultaneous enlargement with increasing temperature. The hysteresis appears to stem from the screening of charges that are transferred from graphene to traps at the interface of PZT and graphene. The magnitude of the charge neutrality point under opposite gate voltage sweep are enhanced with the increase of temperature and gate voltage can be ascribed to the common effects of the temperature and voltage magnitude dependent mechanisms such as interface charge trapping process and the polarization effects of PZT films.",

author = "Zhang, {Xiao Wen} and Dan Xie and Xu, {Jian Long} and Cheng Zhang and Sun, {Yi Lin} and Zhao, {Yuan Fan} and Xian Li and Li, {Xin Ming} and Zhu, {Hong Wei} and Chen, {Hua Mao} and Chang, {Ting Chang}",

year = "2015",

month = aug,

day = "8",

doi = "10.1016/j.carbon.2015.05.064",

language = "English",

volume = "93",

pages = "384--392",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors

AU - Zhang, Xiao Wen

AU - Xie, Dan

AU - Xu, Jian Long

AU - Zhang, Cheng

AU - Sun, Yi Lin

AU - Zhao, Yuan Fan

AU - Li, Xian

AU - Li, Xin Ming

AU - Zhu, Hong Wei

AU - Chen, Hua Mao

AU - Chang, Ting Chang

PY - 2015/8/8

Y1 - 2015/8/8

N2 - We report the temperature and gate voltage dependent electrical properties of PZT gated graphene field effect transistors (PZT-GFETs) in the vacuum atmosphere. The PZT-GFETs exhibit p-type characteristics which are attributed to the chemical doping induced the Fermi level shifting below the Dirac point. Meanwhile, it also shows a large memory window. The temperature dependencies of the source-drain current in the range of 20-300 K indicate thermally activated hysteresis behaviors. The hysteresis in the transfer characteristics of PZT-GFETs shows a simultaneous enlargement with increasing temperature. The hysteresis appears to stem from the screening of charges that are transferred from graphene to traps at the interface of PZT and graphene. The magnitude of the charge neutrality point under opposite gate voltage sweep are enhanced with the increase of temperature and gate voltage can be ascribed to the common effects of the temperature and voltage magnitude dependent mechanisms such as interface charge trapping process and the polarization effects of PZT films.

AB - We report the temperature and gate voltage dependent electrical properties of PZT gated graphene field effect transistors (PZT-GFETs) in the vacuum atmosphere. The PZT-GFETs exhibit p-type characteristics which are attributed to the chemical doping induced the Fermi level shifting below the Dirac point. Meanwhile, it also shows a large memory window. The temperature dependencies of the source-drain current in the range of 20-300 K indicate thermally activated hysteresis behaviors. The hysteresis in the transfer characteristics of PZT-GFETs shows a simultaneous enlargement with increasing temperature. The hysteresis appears to stem from the screening of charges that are transferred from graphene to traps at the interface of PZT and graphene. The magnitude of the charge neutrality point under opposite gate voltage sweep are enhanced with the increase of temperature and gate voltage can be ascribed to the common effects of the temperature and voltage magnitude dependent mechanisms such as interface charge trapping process and the polarization effects of PZT films.

UR - http://www.scopus.com/inward/record.url?scp=84938582800&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2015.05.064

DO - 10.1016/j.carbon.2015.05.064

M3 - Article

AN - SCOPUS:84938582800

SN - 0008-6223

VL - 93

SP - 384

EP - 392

JO - Carbon

JF - Carbon

ER -

Temperature-dependent electrical transport properties in graphene/Pb(Zr_0.4Ti_0.6)O₃ field effect transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this