Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Hui Cai; Bin Chen; Gang Wang; Emmanuel Soignard; Afsaneh Khosravi; Marco Manca; Xavier Marie; Shery L.Y. Chang; Bernhard Urbaszek; Sefaattin Tongay

doi:10.1002/adma.201605551

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Hui Cai, Bin Chen, Gang Wang, Emmanuel Soignard, Afsaneh Khosravi, Marco Manca, Xavier Marie, Shery L.Y. Chang, Bernhard Urbaszek, Sefaattin Tongay^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Original language	English
Article number	1605551
Journal	Advanced Materials
Volume	29
Issue number	8
DOIs	https://doi.org/10.1002/adma.201605551
Publication status	Published - Feb 2017
Externally published	Yes

Keywords

gallium telluride
physical vapor transport
pseudo-1D materials

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10.1002/adma.201605551

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title = "Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy",

keywords = "gallium telluride, physical vapor transport, pseudo-1D materials",

author = "Hui Cai and Bin Chen and Gang Wang and Emmanuel Soignard and Afsaneh Khosravi and Marco Manca and Xavier Marie and Chang, {Shery L.Y.} and Bernhard Urbaszek and Sefaattin Tongay",

year = "2017",

month = feb,

doi = "10.1002/adma.201605551",

language = "English",

volume = "29",

journal = "Advanced Materials",

issn = "0935-9648",

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T1 - Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

AU - Cai, Hui

AU - Chen, Bin

AU - Wang, Gang

AU - Soignard, Emmanuel

AU - Khosravi, Afsaneh

AU - Manca, Marco

AU - Marie, Xavier

AU - Chang, Shery L.Y.

AU - Urbaszek, Bernhard

AU - Tongay, Sefaattin

PY - 2017/2

Y1 - 2017/2

KW - gallium telluride

KW - physical vapor transport

KW - pseudo-1D materials

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U2 - 10.1002/adma.201605551

DO - 10.1002/adma.201605551

M3 - Article

C2 - 27990702

AN - SCOPUS:85006968722

SN - 0935-9648

VL - 29

JO - Advanced Materials

JF - Advanced Materials

IS - 8

M1 - 1605551

ER -

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Keywords

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