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Study of S
+
ion-assisted sulfurization of n-GaAs (1 0 0) surface
H. Y. Hu
, Q. Zhao
*
*
Corresponding author for this work
School of Aerospace Engineering
Beijing Institute of Technology
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peer-review
2
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+
ion-assisted sulfurization of n-GaAs (1 0 0) surface'. Together they form a unique fingerprint.
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Material Science
Gallium Arsenide
100%
Annealing
25%
Ion Implantation
25%
Structure (Composition)
12%
X-Ray Photoelectron Spectroscopy
12%
Low-Energy Electron Diffraction
12%