Structural and dielectric properties of ion beam deposited titanium oxynitride thin films

Liuwei Jia; Huiping Lu; Yujing Ran; Shujun Zhao; Haonan Liu; Yinglan Li; Zhaotan Jiang; Zhi Wang

doi:10.1007/s10853-018-2923-y

Structural and dielectric properties of ion beam deposited titanium oxynitride thin films

Liuwei Jia, Huiping Lu, Yujing Ran, Shujun Zhao, Haonan Liu, Yinglan Li, Zhaotan Jiang, Zhi Wang^*

^*Corresponding author for this work

School of Physics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Titanium oxynitride (TiO _xN _y) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (E_a), assisting ion beam current (I_a) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc TiO _xN _y (220)-oriented. Proper E_a and low I_a can enhance the (220) orientation in TiO _xN _y thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher E_a and I_a make the TiO _xN _y films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.

Original language	English
Pages (from-to)	1452-1461
Number of pages	10
Journal	Journal of Materials Science
Volume	54
Issue number	2
DOIs	https://doi.org/10.1007/s10853-018-2923-y
Publication status	Published - 1 Jan 2019

Access to Document

10.1007/s10853-018-2923-y

Cite this

@article{5317261975eb4f248083ebec10db1fe8,

title = "Structural and dielectric properties of ion beam deposited titanium oxynitride thin films",

abstract = "Titanium oxynitride (TiO xN y) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (Ea), assisting ion beam current (Ia) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc TiO xN y (220)-oriented. Proper Ea and low Ia can enhance the (220) orientation in TiO xN y thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher Ea and Ia make the TiO xN y films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.",

author = "Liuwei Jia and Huiping Lu and Yujing Ran and Shujun Zhao and Haonan Liu and Yinglan Li and Zhaotan Jiang and Zhi Wang",

note = "Publisher Copyright: {\textcopyright} 2018, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2019",

month = jan,

day = "1",

doi = "10.1007/s10853-018-2923-y",

language = "English",

volume = "54",

pages = "1452--1461",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer",

number = "2",

}

TY - JOUR

T1 - Structural and dielectric properties of ion beam deposited titanium oxynitride thin films

AU - Jia, Liuwei

AU - Lu, Huiping

AU - Ran, Yujing

AU - Zhao, Shujun

AU - Liu, Haonan

AU - Li, Yinglan

AU - Jiang, Zhaotan

AU - Wang, Zhi

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Titanium oxynitride (TiO xN y) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (Ea), assisting ion beam current (Ia) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc TiO xN y (220)-oriented. Proper Ea and low Ia can enhance the (220) orientation in TiO xN y thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher Ea and Ia make the TiO xN y films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.

AB - Titanium oxynitride (TiO xN y) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (Ea), assisting ion beam current (Ia) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc TiO xN y (220)-oriented. Proper Ea and low Ia can enhance the (220) orientation in TiO xN y thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher Ea and Ia make the TiO xN y films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.

UR - http://www.scopus.com/inward/record.url?scp=85053799798&partnerID=8YFLogxK

U2 - 10.1007/s10853-018-2923-y

DO - 10.1007/s10853-018-2923-y

M3 - Article

AN - SCOPUS:85053799798

SN - 0022-2461

VL - 54

SP - 1452

EP - 1461

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 2

ER -

Structural and dielectric properties of ion beam deposited titanium oxynitride thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this