Single-layer graphene field-effect transistors with ferroelectric PZT gate

Xiaowen Zhang; Dan Xie; Jianlong Xu; Haiming Zhao; Cheng Zhang; Yilin Sun; Yuanfan Zhao; Tingting Feng; Gang Li; Tianling Ren

doi:10.1109/ICSICT.2014.7021336

Single-layer graphene field-effect transistors with ferroelectric PZT gate

Xiaowen Zhang, Dan Xie^*, Jianlong Xu, Haiming Zhao, Cheng Zhang, Yilin Sun, Yuanfan Zhao, Tingting Feng, Gang Li, Tianling Ren

^*Corresponding author for this work

Tsinghua University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when V_gmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021336
Publication status	Published - 23 Jan 2014
Externally published	Yes
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

Access to Document

10.1109/ICSICT.2014.7021336

Cite this

Zhang, X., Xie, D., Xu, J., Zhao, H., Zhang, C., Sun, Y., Zhao, Y., Feng, T., Li, G., & Ren, T. (2014). Single-layer graphene field-effect transistors with ferroelectric PZT gate. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021336 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021336

Zhang, Xiaowen ; Xie, Dan ; Xu, Jianlong et al. / Single-layer graphene field-effect transistors with ferroelectric PZT gate. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{dd12e771e3844902ac0c2712f29b6728,

title = "Single-layer graphene field-effect transistors with ferroelectric PZT gate",

abstract = "Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when Vgmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.",

author = "Xiaowen Zhang and Dan Xie and Jianlong Xu and Haiming Zhao and Cheng Zhang and Yilin Sun and Yuanfan Zhao and Tingting Feng and Gang Li and Tianling Ren",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021336",

language = "English",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

address = "United States",

}

Zhang, X, Xie, D, Xu, J, Zhao, H, Zhang, C, Sun, Y, Zhao, Y, Feng, T, Li, G & Ren, T 2014, Single-layer graphene field-effect transistors with ferroelectric PZT gate. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021336, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021336

Single-layer graphene field-effect transistors with ferroelectric PZT gate. / Zhang, Xiaowen; Xie, Dan; Xu, Jianlong et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021336 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Single-layer graphene field-effect transistors with ferroelectric PZT gate

AU - Zhang, Xiaowen

AU - Xie, Dan

AU - Xu, Jianlong

AU - Zhao, Haiming

AU - Zhang, Cheng

AU - Sun, Yilin

AU - Zhao, Yuanfan

AU - Feng, Tingting

AU - Li, Gang

AU - Ren, Tianling

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when Vgmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.

AB - Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when Vgmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.

UR - http://www.scopus.com/inward/record.url?scp=84946689731&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2014.7021336

DO - 10.1109/ICSICT.2014.7021336

M3 - Conference contribution

AN - SCOPUS:84946689731

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Zhang X, Xie D, Xu J, Zhao H, Zhang C, Sun Y et al. Single-layer graphene field-effect transistors with ferroelectric PZT gate. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021336. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021336

Single-layer graphene field-effect transistors with ferroelectric PZT gate

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this