Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX2(X = Se, Te) at the Two-Dimensional Limit

Ming Qiang Ren, Sha Han, Jia Qi Fan, Li Wang, Pengdong Wang, Wei Ren, Kun Peng, Shujing Li, Shu Ze Wang, Fa Wei Zheng, Ping Zhang, Fangsen Li*, Xucun Ma*, Qi Kun Xue*, Can Li Song*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

Original languageEnglish
Pages (from-to)476-484
Number of pages9
JournalNano Letters
Volume22
Issue number1
DOIs
Publication statusPublished - 12 Jan 2022
Externally publishedYes

Keywords

  • TMDC
  • charge density wave
  • interface engineering
  • semiconductor-metal transition
  • thin films

Fingerprint

Dive into the research topics of 'Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX2(X = Se, Te) at the Two-Dimensional Limit'. Together they form a unique fingerprint.

Cite this