Abstract
A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.
Original language | English |
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Pages (from-to) | 476-484 |
Number of pages | 9 |
Journal | Nano Letters |
Volume | 22 |
Issue number | 1 |
DOIs | |
Publication status | Published - 12 Jan 2022 |
Externally published | Yes |
Keywords
- TMDC
- charge density wave
- interface engineering
- semiconductor-metal transition
- thin films