Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX2(X = Se, Te) at the Two-Dimensional Limit

Ming Qiang Ren; Sha Han; Jia Qi Fan; Li Wang; Pengdong Wang; Wei Ren; Kun Peng; Shujing Li; Shu Ze Wang; Fa Wei Zheng; Ping Zhang; Fangsen Li; Xucun Ma; Qi Kun Xue; Can Li Song

doi:10.1021/acs.nanolett.1c04372

Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX₂(X = Se, Te) at the Two-Dimensional Limit

Ming Qiang Ren, Sha Han, Jia Qi Fan, Li Wang, Pengdong Wang, Wei Ren, Kun Peng, Shujing Li, Shu Ze Wang, Fa Wei Zheng, Ping Zhang, Fangsen Li^*, Xucun Ma^*, Qi Kun Xue^*, Can Li Song^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

Original language	English
Pages (from-to)	476-484
Number of pages	9
Journal	Nano Letters
Volume	22
Issue number	1
DOIs	https://doi.org/10.1021/acs.nanolett.1c04372
Publication status	Published - 12 Jan 2022
Externally published	Yes

Keywords

TMDC
charge density wave
interface engineering
semiconductor-metal transition
thin films

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10.1021/acs.nanolett.1c04372

Cite this

Ren, M. Q., Han, S., Fan, J. Q., Wang, L., Wang, P., Ren, W., Peng, K., Li, S., Wang, S. Z., Zheng, F. W., Zhang, P., Li, F., Ma, X., Xue, Q. K., & Song, C. L. (2022). Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX₂(X = Se, Te) at the Two-Dimensional Limit. Nano Letters, 22(1), 476-484. https://doi.org/10.1021/acs.nanolett.1c04372

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title = "Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX2(X = Se, Te) at the Two-Dimensional Limit",

abstract = "A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.",

keywords = "TMDC, charge density wave, interface engineering, semiconductor-metal transition, thin films",

author = "Ren, {Ming Qiang} and Sha Han and Fan, {Jia Qi} and Li Wang and Pengdong Wang and Wei Ren and Kun Peng and Shujing Li and Wang, {Shu Ze} and Zheng, {Fa Wei} and Ping Zhang and Fangsen Li and Xucun Ma and Xue, {Qi Kun} and Song, {Can Li}",

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doi = "10.1021/acs.nanolett.1c04372",

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T1 - Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX2(X = Se, Te) at the Two-Dimensional Limit

AU - Ren, Ming Qiang

AU - Han, Sha

AU - Fan, Jia Qi

AU - Wang, Li

AU - Wang, Pengdong

AU - Ren, Wei

AU - Peng, Kun

AU - Li, Shujing

AU - Wang, Shu Ze

AU - Zheng, Fa Wei

AU - Zhang, Ping

AU - Li, Fangsen

AU - Ma, Xucun

AU - Xue, Qi Kun

AU - Song, Can Li

PY - 2022/1/12

Y1 - 2022/1/12

N2 - A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

AB - A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

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KW - interface engineering

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KW - thin films

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Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX₂(X = Se, Te) at the Two-Dimensional Limit

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