Recombination efficiency in organic single-layer light-emitting diodes at high fields

Shengyi Yang; Zheng Xu; Zhenjia Wang; Xurong Xu

doi:10.1063/1.1410339

Recombination efficiency in organic single-layer light-emitting diodes at high fields

Shengyi Yang^*, Zheng Xu, Zhenjia Wang, Xurong Xu

^*Corresponding author for this work

Beijing Jiaotong University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.

Original language	English
Pages (from-to)	2529-2531
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	16
DOIs	https://doi.org/10.1063/1.1410339
Publication status	Published - 15 Oct 2001
Externally published	Yes

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10.1063/1.1410339

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abstract = "By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.",

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AU - Yang, Shengyi

AU - Xu, Zheng

AU - Wang, Zhenjia

AU - Xu, Xurong

PY - 2001/10/15

Y1 - 2001/10/15

N2 - By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.

AB - By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.

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Recombination efficiency in organic single-layer light-emitting diodes at high fields

Abstract

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