Preparation and properties of PZT thick film by 0-3 method

Wei Ren, Xiu Chen Zhao, Jun Hong Li*, Cheng Hao Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

PZT (PbZr0.52Ti0.48O3) thick film was prepared by modified 0-3 method. The surface roughness of film was greatly decreased by improving traditional slurry preparation process including the slurry aging, standing, removing sedimentary particles and concentration methods, and the film with little roughness was fit for preparation of piezoelectric micro-machined transducers. The thick film was crystallized by single-layer annealing process, and the effect of the crystallization temperature on the performance of PZT thick films was studied. The results show that the roughness of thick films decreases obviously and the surface morphology improves greatly by modifing slurry preparation process; the grain size of PZT thick films increases, ferroelectric property improve as the temperature increasing, the residual polarization and coercive field of film crystallized at 700℃ are 15 μC/cm2 and 30.5 kV/cm, respectively, and the greater surface roughness trends towards occur at higher crystallizing temperature.

Original languageEnglish
Pages (from-to)1551-1556
Number of pages6
JournalRengong Jingti Xuebao/Journal of Synthetic Crystals
Volume44
Issue number6
Publication statusPublished - 1 Jun 2015

Keywords

  • 0-3 method
  • Crystallization temperature
  • PZT thick film
  • Roughness

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