Preparation and properties of Pb (Ta1/2Sc1/2) O3 thin films

Mei Dong Liu*, Yi Ke Zeng, Chuan Yi Deng, Sheng Lin Jiang, Yuan Xin Li, Yan Qiu Li, Shao Bo Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Pb(Sc1/2Ta1/2) O3(PST) ferroelectric thin films with ABO3 perovskite structure on Pt/Ti/SiO2/Si substrate have been prepared by improved Sol-Gel process. Pb(CH3COO)2·3H2O, Sc(CH3COO)3·xH2O and C10 H25O5Ta are used as raw materials. CH3OCH2CH2OH is used as solvent. PST thin films are excellent materials for preparing ferroelectric miniature refrigerator and uncooled pyroelectric infrared focal plane arrays. The dielectric, pyroelectric and ferroelectric properties of PST thin films were measured. The εr and tan θ of PST thin films are 570 and 0.02, respectively. The Px and EC of PST thin films are 3.8-6.0 μCcm-2 and 40-45 kV·cm-1, respectively, The pyroelectric coefficient of PST thin films are 4.0 × 10-4-20 × 10-4 Cm-2K-1.

Original languageEnglish
Pages (from-to)142-144+159
JournalYadian Yu Shengguang/Piezoelectrics and Acoustooptics
Volume27
Issue number2
Publication statusPublished - Apr 2005
Externally publishedYes

Keywords

  • Ferroelectric properties
  • Ferroelectric thin films
  • Pb(ScTa) O
  • Pyroelectric properties
  • Sol-Gel

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