Preparation and properties of anti-reflection down-conversion film with Bi³⁺, Yb³⁺ co-doped Y₂O₃

Bi³⁺, Yb³⁺ co-doped Y₂O₃ down-conversion film has been prepared by the pulse laser deposition technique on Si(100) substrate with the way of metal-assisted wet etching. The average reflectance of the film has a minimum value of 5.28% in the visible region from 300 to 800 nm. Under 311 nm excitation, the film can emit 980 nm light which is in the best response range to crystalline silicon solar cells. Compared to the film without anti-reflection structure that we have done before, the film with anti-reflection structure has the higher PL intensity. With the increasing of the etching time, the emission intensities of Bi³⁺ and Yb³⁺ increase monotonically. The enhancing light conversion performance by using anti-reflection structure will provide a simple method to the light conversion films which can be used in enhancement of energy efficiency for crystalline Si solar cells.