Photoluminescence from magnetron sputtered SiO2 films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line

C. L. Heng; O. H.Y. Zalloum; E. Chelomentsev; P. Mascher

doi:10.1149/1.2728819

Photoluminescence from magnetron sputtered SiO₂ films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line

C. L. Heng, O. H.Y. Zalloum, E. Chelomentsev, P. Mascher

McMaster University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We have studied photoluminescence (PL) from SiO₂ films codoped with (Er, Ge) deposited by magnetron sputtering of an Er+Ge+SiO₂ composite target in pure Ar ambient. Under excitation of a 325 nm He-Cd laser line, blue emission bands around 400 nm and near infrared bands around 800 nm have been observed, which are attributed to Ge-related defects and Ge nanoclusters (Ge-ncls), respectively. Strong Er³⁺ PL at 1.54 μm was also observed from the films, while the Er PL intensity of a control Er-doped SiO₂ film (i.e., without Ge), is negligible under the same excitation. All the PL intensities vary as functions of thermal annealing temperatures. The results demonstrate that the significant enhancement of Er PL in the (Er, Ge) co-doped SiO₂ films are due to the incorporation of Ge. The roles of Ge-ncls and Ge-related defects to the Er³⁺ excitation are discussed.

Original language	English
Title of host publication	ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics
Publisher	Electrochemical Society Inc.
Pages	549-559
Number of pages	11
Edition	3
ISBN (Electronic)	9781566775526
ISBN (Print)	9781566775526
DOIs	https://doi.org/10.1149/1.2728819
Publication status	Published - 2007
Externally published	Yes
Event	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL, United States Duration: 6 May 2007 → 11 May 2007

Publication series

Name	ECS Transactions
Number	3
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	6/05/07 → 11/05/07

Access to Document

10.1149/1.2728819

Cite this

Heng, C. L., Zalloum, O. H. Y., Chelomentsev, E., & Mascher, P. (2007). Photoluminescence from magnetron sputtered SiO₂ films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line. In ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (3 ed., pp. 549-559). (ECS Transactions; Vol. 6, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.2728819

Heng, C. L. ; Zalloum, O. H.Y. ; Chelomentsev, E. et al. / Photoluminescence from magnetron sputtered SiO₂ films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line. ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3. ed. Electrochemical Society Inc., 2007. pp. 549-559 (ECS Transactions; 3).

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title = "Photoluminescence from magnetron sputtered SiO2 films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line",

abstract = "We have studied photoluminescence (PL) from SiO2 films codoped with (Er, Ge) deposited by magnetron sputtering of an Er+Ge+SiO2 composite target in pure Ar ambient. Under excitation of a 325 nm He-Cd laser line, blue emission bands around 400 nm and near infrared bands around 800 nm have been observed, which are attributed to Ge-related defects and Ge nanoclusters (Ge-ncls), respectively. Strong Er3+ PL at 1.54 μm was also observed from the films, while the Er PL intensity of a control Er-doped SiO2 film (i.e., without Ge), is negligible under the same excitation. All the PL intensities vary as functions of thermal annealing temperatures. The results demonstrate that the significant enhancement of Er PL in the (Er, Ge) co-doped SiO2 films are due to the incorporation of Ge. The roles of Ge-ncls and Ge-related defects to the Er3+ excitation are discussed.",

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Heng, CL, Zalloum, OHY, Chelomentsev, E & Mascher, P 2007, Photoluminescence from magnetron sputtered SiO₂ films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line. in ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3 edn, ECS Transactions, no. 3, vol. 6, Electrochemical Society Inc., pp. 549-559, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting, Chicago, IL, United States, 6/05/07. https://doi.org/10.1149/1.2728819

Photoluminescence from magnetron sputtered SiO₂ films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line. / Heng, C. L.; Zalloum, O. H.Y.; Chelomentsev, E. et al.
ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3. ed. Electrochemical Society Inc., 2007. p. 549-559 (ECS Transactions; Vol. 6, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chelomentsev, E.

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N2 - We have studied photoluminescence (PL) from SiO2 films codoped with (Er, Ge) deposited by magnetron sputtering of an Er+Ge+SiO2 composite target in pure Ar ambient. Under excitation of a 325 nm He-Cd laser line, blue emission bands around 400 nm and near infrared bands around 800 nm have been observed, which are attributed to Ge-related defects and Ge nanoclusters (Ge-ncls), respectively. Strong Er3+ PL at 1.54 μm was also observed from the films, while the Er PL intensity of a control Er-doped SiO2 film (i.e., without Ge), is negligible under the same excitation. All the PL intensities vary as functions of thermal annealing temperatures. The results demonstrate that the significant enhancement of Er PL in the (Er, Ge) co-doped SiO2 films are due to the incorporation of Ge. The roles of Ge-ncls and Ge-related defects to the Er3+ excitation are discussed.

AB - We have studied photoluminescence (PL) from SiO2 films codoped with (Er, Ge) deposited by magnetron sputtering of an Er+Ge+SiO2 composite target in pure Ar ambient. Under excitation of a 325 nm He-Cd laser line, blue emission bands around 400 nm and near infrared bands around 800 nm have been observed, which are attributed to Ge-related defects and Ge nanoclusters (Ge-ncls), respectively. Strong Er3+ PL at 1.54 μm was also observed from the films, while the Er PL intensity of a control Er-doped SiO2 film (i.e., without Ge), is negligible under the same excitation. All the PL intensities vary as functions of thermal annealing temperatures. The results demonstrate that the significant enhancement of Er PL in the (Er, Ge) co-doped SiO2 films are due to the incorporation of Ge. The roles of Ge-ncls and Ge-related defects to the Er3+ excitation are discussed.

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BT - ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics

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Heng CL, Zalloum OHY, Chelomentsev E, Mascher P. Photoluminescence from magnetron sputtered SiO₂ films Co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line. In ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3 ed. Electrochemical Society Inc. 2007. p. 549-559. (ECS Transactions; 3). doi: 10.1149/1.2728819