TY - JOUR
T1 - Perovskite colloidal quantum-dot enhanced graphene/silicon heterojunction with improved ultraviolet response
AU - Tan, Yimei
AU - Mu, Ge
AU - Rao, Tianyu
AU - Luo, Yuning
AU - Zhao, Pengfei
AU - Chen, Menglu
AU - Tang, Xin
N1 - Publisher Copyright:
© 2023 Author(s).
PY - 2023/1/30
Y1 - 2023/1/30
N2 - Silicon (Si) is a mature semiconductor detection material because of its appropriate bandgap, high reliability, and low-cost manufacturing process. However, the detection range of Si-based photodetectors is mainly restricted to visible and near-infrared (NIR) ranges. Broadening the detection range of Si-based detectors to ultraviolet (UV) could ignite numerous applications, including flame detection, defense safety, and environmental monitoring. Here, the obtained perovskite colloidal quantum dots (QDs) with high quality are integrated with a Si/graphene heterojunction to broaden and improve response. By the electrical coupling mechanism between graphene and QDs, the built-in potential in detectors is maximized. As a result, the devices exhibit a high UV responsivity of 0.33 A W-1 at 210 nm, 0.73 A W-1 at 400 nm, and a superior detectivity of nearly 1012 Jones under the UV region. Aside from that, the performance of devices under visible and NIR ranges is also dramatically improved compared to that of the one without perovskite QDs.
AB - Silicon (Si) is a mature semiconductor detection material because of its appropriate bandgap, high reliability, and low-cost manufacturing process. However, the detection range of Si-based photodetectors is mainly restricted to visible and near-infrared (NIR) ranges. Broadening the detection range of Si-based detectors to ultraviolet (UV) could ignite numerous applications, including flame detection, defense safety, and environmental monitoring. Here, the obtained perovskite colloidal quantum dots (QDs) with high quality are integrated with a Si/graphene heterojunction to broaden and improve response. By the electrical coupling mechanism between graphene and QDs, the built-in potential in detectors is maximized. As a result, the devices exhibit a high UV responsivity of 0.33 A W-1 at 210 nm, 0.73 A W-1 at 400 nm, and a superior detectivity of nearly 1012 Jones under the UV region. Aside from that, the performance of devices under visible and NIR ranges is also dramatically improved compared to that of the one without perovskite QDs.
UR - http://www.scopus.com/inward/record.url?scp=85147329651&partnerID=8YFLogxK
U2 - 10.1063/5.0130737
DO - 10.1063/5.0130737
M3 - Article
AN - SCOPUS:85147329651
SN - 0003-6951
VL - 122
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 5
M1 - 051102
ER -