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Near-interface charged dislocations in AlGaN/GaN bilayer heterostructures
A. Sangghaleh, E. Pan,
X. Han
School of Aerospace Engineering
University of Akron
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Article
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peer-review
7
Citations (Scopus)
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Material Science
Heterojunction
100%
Piezoelectricity
50%
Nitride Semiconductor
50%
Transistor
50%
Chemical Engineering
Nitride
100%
Engineering
Nitride Semiconductor
50%