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Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies
Ping Li
, Yu Tang Xu
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Corresponding author for this work
School of Arts and Design
Beijing Institute of Technology
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peer-review
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Material Science
Dielectric Material
53%
Electrical Breakdown
100%
Metal Oxide
33%
Oxide Compound
100%
Oxide Semiconductor
6%
Oxygen Vacancy
100%
Transistor
6%
Engineering
Lattice Point
6%