TY - JOUR
T1 - Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors
AU - Imran, Ali
AU - Sulaman, Muhammad
AU - Yang, Shengyi
AU - Bukhtiar, Arfan
AU - Qasim, Muhammad
AU - Elshahat, Sayed
AU - Khan, Muhammad Saddique Akbar
AU - Dastgeer, Ghulam
AU - Zou, Bingsuo
AU - Yousaf, Muhammad
N1 - Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/4
Y1 - 2022/4
N2 - III-Nitrides (III-N) heterojunction broadband photodetectors have attracted substantial attention in optoelectronic applications because of their large band tuneability from ultraviolet (UV) to near-infrared (NIR), high temperature, and high-power sustainability as compared to traditional semiconductor materials. InN is extensively studied as optoelectronic material in recent years due to its unique characteristics such as short bandgap, high electron mobility, and high sensitivity in the NIR region. The InN/GaN junction may exhibit exceptional optoelectronic properties due to spontaneous and piezoelectric polarization at the interface. In this work, we fabricated high quality InN/GaN heterointerface with high electron mobility and incorporate it for high-performance broadband photodetector with a simple InN/GaN heterostructure. As a result, a high responsivity of 37.07 A/W, and a specific detectivity of 1.82 × 1013 Jones at 50 µWcm−2 are calculated. The results are verified numerically with Technology Computer-Aided Design (TCAD) software which is comparable with experimental measurements. The proposed InN/GaN can be a potential candidate for the future broadband photodetector market.
AB - III-Nitrides (III-N) heterojunction broadband photodetectors have attracted substantial attention in optoelectronic applications because of their large band tuneability from ultraviolet (UV) to near-infrared (NIR), high temperature, and high-power sustainability as compared to traditional semiconductor materials. InN is extensively studied as optoelectronic material in recent years due to its unique characteristics such as short bandgap, high electron mobility, and high sensitivity in the NIR region. The InN/GaN junction may exhibit exceptional optoelectronic properties due to spontaneous and piezoelectric polarization at the interface. In this work, we fabricated high quality InN/GaN heterointerface with high electron mobility and incorporate it for high-performance broadband photodetector with a simple InN/GaN heterostructure. As a result, a high responsivity of 37.07 A/W, and a specific detectivity of 1.82 × 1013 Jones at 50 µWcm−2 are calculated. The results are verified numerically with Technology Computer-Aided Design (TCAD) software which is comparable with experimental measurements. The proposed InN/GaN can be a potential candidate for the future broadband photodetector market.
KW - InN/GaN heterostructure
KW - Molecular beam epitaxy
KW - Photodetector
KW - TCAD simulation
UR - http://www.scopus.com/inward/record.url?scp=85124252993&partnerID=8YFLogxK
U2 - 10.1016/j.surfin.2022.101772
DO - 10.1016/j.surfin.2022.101772
M3 - Article
AN - SCOPUS:85124252993
SN - 2468-0230
VL - 29
JO - Surfaces and Interfaces
JF - Surfaces and Interfaces
M1 - 101772
ER -