TY - JOUR
T1 - Millimeter-Scale Single-Crystalline Semiconducting MoTe 2 via Solid-to-Solid Phase Transformation
AU - Xu, Xiaolong
AU - Chen, Shulin
AU - Liu, Shuai
AU - Cheng, Xing
AU - Xu, Wanjin
AU - Li, Pan
AU - Wan, Yi
AU - Yang, Shiqi
AU - Gong, Wenting
AU - Yuan, Kai
AU - Gao, Peng
AU - Ye, Yu
AU - Dai, Lun
N1 - Publisher Copyright:
Copyright © 2019 American Chemical Society.
PY - 2019/2/6
Y1 - 2019/2/6
N2 - Among the Mo- and W-based two-dimensional (2D) transition metal dichalcogenides, MoTe 2 is particularly interesting for phase-engineering applications, because it has the smallest free energy difference between the semiconducting 2H phase and metallic 1T′ phase. In this work, we reveal that, under the proper circumstance, Mo and Te atoms can rearrange themselves to transform from a polycrystalline 1T′ phase into a single-crystalline 2H phase in a large scale. We manifest the mechanisms of the solid-to-solid transformation by conducting density functional theory calculations, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. The phase transformation is well described by the time-temperature-transformation diagram. By optimizing the kinetic rates of nucleation and crystal growth, we have synthesized a single-crystalline 2H-MoTe 2 domain with a diameter of 2.34 mm, a centimeter-scale 2H-MoTe 2 thin film with a domain size up to several hundred micrometers, and a seamless 1T′-2H MoTe 2 coplanar homojunction. The 1T′-2H MoTe 2 homojunction provides an elegant solution for ohmic contact of 2D semiconductors. The controlled solid-to-solid phase transformation in 2D limit provides a new route to realize wafer-scale single-crystalline 2D semiconductor and coplanar heterostructure for 2D circuitry.
AB - Among the Mo- and W-based two-dimensional (2D) transition metal dichalcogenides, MoTe 2 is particularly interesting for phase-engineering applications, because it has the smallest free energy difference between the semiconducting 2H phase and metallic 1T′ phase. In this work, we reveal that, under the proper circumstance, Mo and Te atoms can rearrange themselves to transform from a polycrystalline 1T′ phase into a single-crystalline 2H phase in a large scale. We manifest the mechanisms of the solid-to-solid transformation by conducting density functional theory calculations, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. The phase transformation is well described by the time-temperature-transformation diagram. By optimizing the kinetic rates of nucleation and crystal growth, we have synthesized a single-crystalline 2H-MoTe 2 domain with a diameter of 2.34 mm, a centimeter-scale 2H-MoTe 2 thin film with a domain size up to several hundred micrometers, and a seamless 1T′-2H MoTe 2 coplanar homojunction. The 1T′-2H MoTe 2 homojunction provides an elegant solution for ohmic contact of 2D semiconductors. The controlled solid-to-solid phase transformation in 2D limit provides a new route to realize wafer-scale single-crystalline 2D semiconductor and coplanar heterostructure for 2D circuitry.
UR - http://www.scopus.com/inward/record.url?scp=85060734466&partnerID=8YFLogxK
U2 - 10.1021/jacs.8b12230
DO - 10.1021/jacs.8b12230
M3 - Article
C2 - 30633514
AN - SCOPUS:85060734466
SN - 0002-7863
VL - 141
SP - 2128
EP - 2134
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 5
ER -