Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Long Xue; Li Xaing; Lin Peng-Ting; Cheng Xing-Wang; Liu Ying; Cao Chuan-Bao

doi:10.1088/1674-1056/19/2/027202

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Long Xue, Li Xaing^*, Lin Peng-Ting, Cheng Xing-Wang, Liu Ying, Cao Chuan-Bao

^*Corresponding author for this work

School of Material Science and Engineering

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Sol-gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

Original language	English
Article number	027202
Journal	Chinese Physics B
Volume	19
Issue number	2
DOIs	https://doi.org/10.1088/1674-1056/19/2/027202
Publication status	Published - 2010

Keywords

Doping
Photoluminescence
ZnO

Access to Document

10.1088/1674-1056/19/2/027202

Cite this

@article{c5382f15a8ee41c694412309558fa799,

title = "Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films",

abstract = "Sol-gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.",

keywords = "Doping, Photoluminescence, ZnO",

author = "Long Xue and Li Xaing and Lin Peng-Ting and Cheng Xing-Wang and Liu Ying and Cao Chuan-Bao",

year = "2010",

doi = "10.1088/1674-1056/19/2/027202",

language = "English",

volume = "19",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

AU - Xue, Long

AU - Xaing, Li

AU - Peng-Ting, Lin

AU - Xing-Wang, Cheng

AU - Ying, Liu

AU - Chuan-Bao, Cao

PY - 2010

Y1 - 2010

N2 - Sol-gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

AB - Sol-gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

KW - Doping

KW - Photoluminescence

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=77649263319&partnerID=8YFLogxK

U2 - 10.1088/1674-1056/19/2/027202

DO - 10.1088/1674-1056/19/2/027202

M3 - Article

AN - SCOPUS:77649263319

SN - 1674-1056

VL - 19

JO - Chinese Physics B

JF - Chinese Physics B

IS - 2

M1 - 027202

ER -

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this