Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Long Xue, Li Xaing*, Lin Peng-Ting, Cheng Xing-Wang, Liu Ying, Cao Chuan-Bao

*Corresponding author for this work

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Abstract

Sol-gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

Original languageEnglish
Article number027202
JournalChinese Physics B
Volume19
Issue number2
DOIs
Publication statusPublished - 2010

Keywords

  • Doping
  • Photoluminescence
  • ZnO

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Xue, L., Xaing, L., Peng-Ting, L., Xing-Wang, C., Ying, L., & Chuan-Bao, C. (2010). Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films. Chinese Physics B, 19(2), Article 027202. https://doi.org/10.1088/1674-1056/19/2/027202