Kagome 超导体 AV3Sb5 (A = K, Rb, Cs) 的掺杂效应

Translated title of the contribution: Doping effects of Kagome superconductor AV3Sb5 (A = K, Rb, Cs)

Yong Kai Li, Jin Jin Liu, Xin Zhang, Peng Zhu, Liu Yang, Yu Qi Zhang, Huang Yu Wu, Zhi Wei Wang*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

Abstract

Material with Kagome lattice provides an excellent platform for studying electronic correlation effects, topological states of matter, unconventional superconductivity, and geometric frustration. The recently discovered Kagome superconductors AV3Sb5 (A = K, Rb, Cs) have attracted widespread attention in the field of condensed matter physics, and many efforts have been made to elucidate their novel physical properties, such as charge density wave, unconventional superconductivity, and band topology. Meanwhile, many groups have effectively tuned these novel properties through chemical doping, offering a good opportunity for further understanding the materials of this system. In this paper, we comprehensively review the latest research progress of the doping effect of this rapidly developed AV3Sb5 system, with the objective of further promoting the in-depth research into Kagome superconductor. Specifically, we review the chemical doping in CsV3Sb5 with elements such as Nb, Ta, Ti, and Sn, and the surface doping with elements Cs or O as well, and describe their influences on the novel quantum properties, especially superconductivity, charge density wave, and electronic band structure of the material. Furthermore, the intricate physical mechanism of doping manipulation is discussed, in order to provide a basic knowledge for further understanding and studying the rich quantum effects of the system, such as charge density waves, time reversal symmetry breaking, and superconductivity.

Translated title of the contributionDoping effects of Kagome superconductor AV3Sb5 (A = K, Rb, Cs)
Original languageChinese (Traditional)
Article number067401
JournalWuli Xuebao/Acta Physica Sinica
Volume73
Issue number6
DOIs
Publication statusPublished - 2024

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