Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao; Libin Tang; Shengyi Yang; Shu Ping Lau; Kar Seng Teng

doi:10.1186/s11671-020-03336-7

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao, Libin Tang^*, Shengyi Yang^*, Shu Ping Lau, Kar Seng Teng^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10¹¹ Jones at 850 nm light irradiation at room temperature was demonstrated.

Original language	English
Article number	138
Journal	Nanoscale Research Letters
Volume	15
Issue number	1
DOIs	https://doi.org/10.1186/s11671-020-03336-7
Publication status	Published - 2020

Keywords

GeTe
Heterojunction
Optoelectronic characteristics
Photovoltaic detector

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10.1186/s11671-020-03336-7

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@article{3453a82e3b344e5ebb6171ae61caf883,

title = "Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction",

abstract = "GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.",

keywords = "GeTe, Heterojunction, Optoelectronic characteristics, Photovoltaic detector",

author = "Yiqun Zhao and Libin Tang and Shengyi Yang and Lau, {Shu Ping} and Teng, {Kar Seng}",

note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",

year = "2020",

doi = "10.1186/s11671-020-03336-7",

language = "English",

volume = "15",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

AU - Zhao, Yiqun

AU - Tang, Libin

AU - Yang, Shengyi

AU - Lau, Shu Ping

AU - Teng, Kar Seng

PY - 2020

Y1 - 2020

N2 - GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.

AB - GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.

KW - GeTe

KW - Heterojunction

KW - Optoelectronic characteristics

KW - Photovoltaic detector

UR - http://www.scopus.com/inward/record.url?scp=85087103092&partnerID=8YFLogxK

U2 - 10.1186/s11671-020-03336-7

DO - 10.1186/s11671-020-03336-7

M3 - Article

AN - SCOPUS:85087103092

SN - 1931-7573

VL - 15

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 138

ER -

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Abstract

Keywords

UN SDGs

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