Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

Linghai Meng, Xian Gang Wu, Sai Ma, Lifu Shi, Mengjiao Zhang, Lingxue Wang, Yu Chen*, Qi Chen, Haizheng Zhong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.

Original languageEnglish
Pages (from-to)93-100
Number of pages8
JournalNanophotonics
Volume9
Issue number1
DOIs
Publication statusPublished - 1 Jan 2020

Keywords

  • composite films
  • luminescence downshifting
  • perovskite
  • quantum dots
  • silicon solar cells

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