TY - GEN
T1 - Impact of molybdenum/silicon multilayer structure on extreme ultraviolet mask fabrication
AU - Zhao, Guorong
AU - Li, Yanqiu
PY - 2007
Y1 - 2007
N2 - Electron beam lithography (EBL) will be used to pattern an Extreme Ultraviolet (EUV) mask. Both forward scattering electrons and backscattering electrons contribute to the energy deposition in resist, which is directly related to the pattern profile. When the exposure conditions, development conditions and the thickness and material of absorber, buffer, capping, and substrate are determined, the structure of molybdenum/silicon (Mo/Si) multilayer become the exclusive factor to influent the EUV mask fabrication. Several researchers have investigated the influence of the number of repeated Mo/Si layer and their thickness on the backscattering coefficient and the deposited energy in the resist. However the secondary electron generation and tracking is not implemented. Furthermore, the characters of pattern profile were not analyzed. In this paper, EBL module of in house software MicroCruiser, which included the secondary electrons and relativistic correction of high energy electron, was used to study the impact of structure of Mo/Si multilayer on the mask fabrication by EBL. Energy distribution in resist, backscattering coefficient (BSC), and the pattern profile had been investigated. The results show that with the number of Mo/Si repeated layers increases, the BSC decrease and the line edge of pattern profile is much smoother.
AB - Electron beam lithography (EBL) will be used to pattern an Extreme Ultraviolet (EUV) mask. Both forward scattering electrons and backscattering electrons contribute to the energy deposition in resist, which is directly related to the pattern profile. When the exposure conditions, development conditions and the thickness and material of absorber, buffer, capping, and substrate are determined, the structure of molybdenum/silicon (Mo/Si) multilayer become the exclusive factor to influent the EUV mask fabrication. Several researchers have investigated the influence of the number of repeated Mo/Si layer and their thickness on the backscattering coefficient and the deposited energy in the resist. However the secondary electron generation and tracking is not implemented. Furthermore, the characters of pattern profile were not analyzed. In this paper, EBL module of in house software MicroCruiser, which included the secondary electrons and relativistic correction of high energy electron, was used to study the impact of structure of Mo/Si multilayer on the mask fabrication by EBL. Energy distribution in resist, backscattering coefficient (BSC), and the pattern profile had been investigated. The results show that with the number of Mo/Si repeated layers increases, the BSC decrease and the line edge of pattern profile is much smoother.
KW - Electron beam lithography
KW - Extreme ultraviolet mask
KW - Molybdenum/Silicon (Mo/Si) multilayer
UR - http://www.scopus.com/inward/record.url?scp=42149097077&partnerID=8YFLogxK
U2 - 10.1117/12.782733
DO - 10.1117/12.782733
M3 - Conference contribution
AN - SCOPUS:42149097077
SN - 9780819468819
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies
T2 - 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Y2 - 8 July 2007 through 12 July 2007
ER -