Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating

Yilin Sun; Dan Xie; Ruixuan Dai; Mengxing Sun; Weiwei Li; Tianling Ren

doi:10.1016/j.cap.2018.01.003

Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating

Yilin Sun, Dan Xie^*, Ruixuan Dai, Mengxing Sun, Weiwei Li, Tianling Ren

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the fabrication of single-walled carbon nanotube (SWCNT) network transistors by ferroelectric Pb(Zr_0.4Ti_0.6)O₃ (PZT) bottom-gating and investigate the polarization effects of PZT on the transport properties of the transistor device. Our devices exhibit typical p-channel transistor characteristics and a large hysteresis loop with high ON/OFF current ratio and large ON current as well as memory window (MW) measured up to 5.2 V. The origin of clockwise hysteresis is attributed to ferroelectric polarization modulated charge trapping/de-trapping process in the interface states between SWCNT networks and PZT. The retention time about 10⁴s with two high stable current states preliminarily demonstrates great potential for future non-volatile memory applications based on such SWCNT/PZT hybrid systems.

Original language	English
Pages (from-to)	324-328
Number of pages	5
Journal	Current Applied Physics
Volume	18
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2018.01.003
Publication status	Published - Mar 2018
Externally published	Yes

Keywords

Carbon nanotubes
Charge trapping/de-trapping process
Ferroelectric polarization
Hysteresis
Transistors

Access to Document

10.1016/j.cap.2018.01.003

Cite this

@article{b7f1ceb9f6ae48efa13aeb35ca840df7,

title = "Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating",

abstract = "We report the fabrication of single-walled carbon nanotube (SWCNT) network transistors by ferroelectric Pb(Zr0.4Ti0.6)O3 (PZT) bottom-gating and investigate the polarization effects of PZT on the transport properties of the transistor device. Our devices exhibit typical p-channel transistor characteristics and a large hysteresis loop with high ON/OFF current ratio and large ON current as well as memory window (MW) measured up to 5.2 V. The origin of clockwise hysteresis is attributed to ferroelectric polarization modulated charge trapping/de-trapping process in the interface states between SWCNT networks and PZT. The retention time about 104s with two high stable current states preliminarily demonstrates great potential for future non-volatile memory applications based on such SWCNT/PZT hybrid systems.",

keywords = "Carbon nanotubes, Charge trapping/de-trapping process, Ferroelectric polarization, Hysteresis, Transistors",

author = "Yilin Sun and Dan Xie and Ruixuan Dai and Mengxing Sun and Weiwei Li and Tianling Ren",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = mar,

doi = "10.1016/j.cap.2018.01.003",

language = "English",

volume = "18",

pages = "324--328",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating

AU - Sun, Yilin

AU - Xie, Dan

AU - Dai, Ruixuan

AU - Sun, Mengxing

AU - Li, Weiwei

AU - Ren, Tianling

PY - 2018/3

Y1 - 2018/3

N2 - We report the fabrication of single-walled carbon nanotube (SWCNT) network transistors by ferroelectric Pb(Zr0.4Ti0.6)O3 (PZT) bottom-gating and investigate the polarization effects of PZT on the transport properties of the transistor device. Our devices exhibit typical p-channel transistor characteristics and a large hysteresis loop with high ON/OFF current ratio and large ON current as well as memory window (MW) measured up to 5.2 V. The origin of clockwise hysteresis is attributed to ferroelectric polarization modulated charge trapping/de-trapping process in the interface states between SWCNT networks and PZT. The retention time about 104s with two high stable current states preliminarily demonstrates great potential for future non-volatile memory applications based on such SWCNT/PZT hybrid systems.

AB - We report the fabrication of single-walled carbon nanotube (SWCNT) network transistors by ferroelectric Pb(Zr0.4Ti0.6)O3 (PZT) bottom-gating and investigate the polarization effects of PZT on the transport properties of the transistor device. Our devices exhibit typical p-channel transistor characteristics and a large hysteresis loop with high ON/OFF current ratio and large ON current as well as memory window (MW) measured up to 5.2 V. The origin of clockwise hysteresis is attributed to ferroelectric polarization modulated charge trapping/de-trapping process in the interface states between SWCNT networks and PZT. The retention time about 104s with two high stable current states preliminarily demonstrates great potential for future non-volatile memory applications based on such SWCNT/PZT hybrid systems.

KW - Carbon nanotubes

KW - Charge trapping/de-trapping process

KW - Ferroelectric polarization

KW - Hysteresis

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=85040575017&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2018.01.003

DO - 10.1016/j.cap.2018.01.003

M3 - Article

AN - SCOPUS:85040575017

SN - 1567-1739

VL - 18

SP - 324

EP - 328

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this