Enhancing charge transfer with foreign molecules through femtosecond laser induced MoS 2 defect sites for photoluminescence control and SERS enhancement

Pei Zuo, Lan Jiang*, Xin Li, Peng Ran, Bo Li, Aisheng Song, Mengyao Tian, Tianbao Ma, Baoshan Guo, Liangti Qu, Yongfeng Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

Defect/active site control is crucial for tuning the chemical, optical, and electronic properties of MoS 2 , which can adjust the performance of MoS 2 in application areas such as electronics, optics, catalysis, and molecular sensing. This study presents an effective method of inducing defect/active sites, including micro/nanofractured structures and S atomic vacancies, on monolayer MoS 2 flakes by using femtosecond laser pulses, through which physical-chemical adsorption and charge transfer between foreign molecules (O 2 or R6G molecules) and MoS 2 are enhanced. The enhanced charge transfer between foreign molecules (O 2 or R6G) and femtosecond laser-treated MoS 2 can enhance the electronic doping effect between them, hence resulting in a photoluminescence photon energy shift (reaching 0.05 eV) of MoS 2 and Raman enhancement (reaching 6.4 times) on MoS 2 flakes for R6G molecule detection. Finally, photoluminescence control and micropatterns on MoS 2 and surface-enhanced-Raman-scattering (SERS) enhancement of MoS 2 for organic molecule detection are achieved. The proposed method, which can control the photoluminescence properties and arbitrary micropatterns on MoS 2 and enhance its chemicobiological sensing performance for organic/biological molecules, has advantages of simplicity, maskless processing, strong controllability, high precision, and high flexibility, highlighting the superior ability of femtosecond laser pulses to achieve the property control and functionalization of two-dimensional materials.

Original languageEnglish
Pages (from-to)485-494
Number of pages10
JournalNanoscale
Volume11
Issue number2
DOIs
Publication statusPublished - 14 Jan 2019

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