Enhanced Magnetoresistance Effect in Graphene Coupled to a Ferromagnetic Oxide with Charge Orbital Ordering

Yujing Fan; Cormac Coileáin; Sunil K. Arora; Ching Ray Chang; Han Chun Wu

doi:10.1142/S2010324722500096

Enhanced Magnetoresistance Effect in Graphene Coupled to a Ferromagnetic Oxide with Charge Orbital Ordering

Yujing Fan, Cormac Coileáin, Sunil K. Arora, Ching Ray Chang, Han Chun Wu^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this paper, we fabricated graphene/Fe3O4 heterostructure devices by stacking monolayer graphene on magnetite (Fe3O4) substrate and investigated their magneto-transport properties. Interestingly, graphene/Fe3O4 heterostructure devices exhibit a giant magnetoresistance (MR) of 70% at a low magnetic field of 0.65T and at 11K, which is three times greater than that of graphene on SiO2. Based on standard two-fluid model and LDA+U simulation, we showed that the observed enhanced MR effect is due to the increased disorder in graphene induced through the charge polarization via the alignment of C atoms of graphene over the charge ordered B-site cations of Fe3O4. Our results demonstrate a potential way to enhance graphene MR effect through coupling graphene with a suitable substrate with charge orbital ordering.

Original language	English
Article number	2250009
Journal	SPIN
Volume	12
Issue number	2
DOIs	https://doi.org/10.1142/S2010324722500096
Publication status	Published - 1 Jun 2022

Keywords

FeO
Graphene
charge orbital ordering
disorder
magnetoresistance
two-fluid model

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10.1142/S2010324722500096

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@article{b8090ecd1a8c4da6ae443e24b6f918cf,

title = "Enhanced Magnetoresistance Effect in Graphene Coupled to a Ferromagnetic Oxide with Charge Orbital Ordering",

abstract = "In this paper, we fabricated graphene/Fe3O4 heterostructure devices by stacking monolayer graphene on magnetite (Fe3O4) substrate and investigated their magneto-transport properties. Interestingly, graphene/Fe3O4 heterostructure devices exhibit a giant magnetoresistance (MR) of 70% at a low magnetic field of 0.65T and at 11K, which is three times greater than that of graphene on SiO2. Based on standard two-fluid model and LDA+U simulation, we showed that the observed enhanced MR effect is due to the increased disorder in graphene induced through the charge polarization via the alignment of C atoms of graphene over the charge ordered B-site cations of Fe3O4. Our results demonstrate a potential way to enhance graphene MR effect through coupling graphene with a suitable substrate with charge orbital ordering.",

keywords = "FeO, Graphene, charge orbital ordering, disorder, magnetoresistance, two-fluid model",

author = "Yujing Fan and Cormac Coile{\'a}in and Arora, {Sunil K.} and Chang, {Ching Ray} and Wu, {Han Chun}",

note = "Publisher Copyright: {\textcopyright} 2022 World Scientific Publishing Company.",

year = "2022",

month = jun,

day = "1",

doi = "10.1142/S2010324722500096",

language = "English",

volume = "12",

journal = "SPIN",

issn = "2010-3247",

publisher = "World Scientific",

number = "2",

}

TY - JOUR

T1 - Enhanced Magnetoresistance Effect in Graphene Coupled to a Ferromagnetic Oxide with Charge Orbital Ordering

AU - Fan, Yujing

AU - Coileáin, Cormac

AU - Arora, Sunil K.

AU - Chang, Ching Ray

AU - Wu, Han Chun

PY - 2022/6/1

Y1 - 2022/6/1

N2 - In this paper, we fabricated graphene/Fe3O4 heterostructure devices by stacking monolayer graphene on magnetite (Fe3O4) substrate and investigated their magneto-transport properties. Interestingly, graphene/Fe3O4 heterostructure devices exhibit a giant magnetoresistance (MR) of 70% at a low magnetic field of 0.65T and at 11K, which is three times greater than that of graphene on SiO2. Based on standard two-fluid model and LDA+U simulation, we showed that the observed enhanced MR effect is due to the increased disorder in graphene induced through the charge polarization via the alignment of C atoms of graphene over the charge ordered B-site cations of Fe3O4. Our results demonstrate a potential way to enhance graphene MR effect through coupling graphene with a suitable substrate with charge orbital ordering.

AB - In this paper, we fabricated graphene/Fe3O4 heterostructure devices by stacking monolayer graphene on magnetite (Fe3O4) substrate and investigated their magneto-transport properties. Interestingly, graphene/Fe3O4 heterostructure devices exhibit a giant magnetoresistance (MR) of 70% at a low magnetic field of 0.65T and at 11K, which is three times greater than that of graphene on SiO2. Based on standard two-fluid model and LDA+U simulation, we showed that the observed enhanced MR effect is due to the increased disorder in graphene induced through the charge polarization via the alignment of C atoms of graphene over the charge ordered B-site cations of Fe3O4. Our results demonstrate a potential way to enhance graphene MR effect through coupling graphene with a suitable substrate with charge orbital ordering.

KW - FeO

KW - Graphene

KW - charge orbital ordering

KW - disorder

KW - magnetoresistance

KW - two-fluid model

UR - http://www.scopus.com/inward/record.url?scp=85130452079&partnerID=8YFLogxK

U2 - 10.1142/S2010324722500096

DO - 10.1142/S2010324722500096

M3 - Article

AN - SCOPUS:85130452079

SN - 2010-3247

VL - 12

JO - SPIN

JF - SPIN

IS - 2

M1 - 2250009

ER -

Enhanced Magnetoresistance Effect in Graphene Coupled to a Ferromagnetic Oxide with Charge Orbital Ordering

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Keywords

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