Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

Ziyi Shao, Junting Xiao, Xiao Guo, Siwen You, Yangyang Zhang, Mingjun Li, Fei Song, Conghua Zhou, Haipeng Xie, Yongli Gao, Jiatao Sun, Han Huang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

Original languageEnglish
Pages (from-to)27-33
Number of pages7
JournalCurrent Applied Physics
Volume36
DOIs
Publication statusPublished - Apr 2022

Keywords

  • Intercalation
  • Interfacial interaction
  • Temperature dependent PL
  • TypeⅡ energy alignment
  • vdW epitaxy

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