Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

Ziyi Shao; Junting Xiao; Xiao Guo; Siwen You; Yangyang Zhang; Mingjun Li; Fei Song; Conghua Zhou; Haipeng Xie; Yongli Gao; Jiatao Sun; Han Huang

doi:10.1016/j.cap.2022.01.005

Emission properties of sequentially deposited ultrathin CH₃NH₃PbI₃/MoS₂ heterostructures

Ziyi Shao, Junting Xiao, Xiao Guo, Siwen You, Yangyang Zhang, Mingjun Li, Fei Song, Conghua Zhou, Haipeng Xie, Yongli Gao, Jiatao Sun, Han Huang^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI₂/MoS₂ into the CH₃NH₃PbI₃/MoS₂ heterostructures via CH₃NH₃I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH₃NH₃PbI₃/MoS₂. Both MoS₂ and CH₃NH₃PbI₃ related photoluminescence (PL) intensity quenching in CH₃NH₃PbI₃/MoS₂ implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH₃NH₃PbI₃ is opposite to that of MoS₂ (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH₃NH₃PbI₃/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

Original language	English
Pages (from-to)	27-33
Number of pages	7
Journal	Current Applied Physics
Volume	36
DOIs	https://doi.org/10.1016/j.cap.2022.01.005
Publication status	Published - Apr 2022

Keywords

Intercalation
Interfacial interaction
Temperature dependent PL
TypeⅡ energy alignment
vdW epitaxy

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10.1016/j.cap.2022.01.005

Cite this

Shao, Z., Xiao, J., Guo, X., You, S., Zhang, Y., Li, M., Song, F., Zhou, C., Xie, H., Gao, Y., Sun, J., & Huang, H. (2022). Emission properties of sequentially deposited ultrathin CH₃NH₃PbI₃/MoS₂ heterostructures. Current Applied Physics, 36, 27-33. https://doi.org/10.1016/j.cap.2022.01.005

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title = "Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures",

abstract = "Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.",

keywords = "Intercalation, Interfacial interaction, Temperature dependent PL, TypeⅡ energy alignment, vdW epitaxy",

author = "Ziyi Shao and Junting Xiao and Xiao Guo and Siwen You and Yangyang Zhang and Mingjun Li and Fei Song and Conghua Zhou and Haipeng Xie and Yongli Gao and Jiatao Sun and Han Huang",

note = "Publisher Copyright: {\textcopyright} 2022 Korean Physical Society",

year = "2022",

month = apr,

doi = "10.1016/j.cap.2022.01.005",

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AU - Shao, Ziyi

AU - Xiao, Junting

AU - Guo, Xiao

AU - You, Siwen

AU - Zhang, Yangyang

AU - Li, Mingjun

AU - Song, Fei

AU - Zhou, Conghua

AU - Xie, Haipeng

AU - Gao, Yongli

AU - Sun, Jiatao

AU - Huang, Han

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N2 - Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

AB - Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

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