Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si

G. G. Qin; C. L. Heng; G. F. Bai; K. Wu; C. Y. Li; Z. C. Ma; W. H. Zong; Li Ping You

doi:10.1063/1.125410

Electroluminescence from Au/(nanoscale Ge/nanoscale SiO₂) superlattices/p-Si

G. G. Qin^*, C. L. Heng, G. F. Bai, K. Wu, C. Y. Li, Z. C. Ma, W. H. Zong, Li Ping You

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Nanoscale Ge/nanoscale SiO₂ superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO²) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO₂ film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640-680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO₂ layers.

Original language	English
Pages (from-to)	3629-3631
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	23
DOIs	https://doi.org/10.1063/1.125410
Publication status	Published - 6 Dec 1999
Externally published	Yes

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@article{228cc04b930c4082a7de6c0dc4b2dd9b,

title = "Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si",

abstract = "Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO2) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO2 film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640-680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO2 layers.",

author = "Qin, {G. G.} and Heng, {C. L.} and Bai, {G. F.} and K. Wu and Li, {C. Y.} and Ma, {Z. C.} and Zong, {W. H.} and You, {Li Ping}",

year = "1999",

month = dec,

day = "6",

doi = "10.1063/1.125410",

language = "English",

volume = "75",

pages = "3629--3631",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si

AU - Qin, G. G.

AU - Heng, C. L.

AU - Bai, G. F.

AU - Wu, K.

AU - Li, C. Y.

AU - Ma, Z. C.

AU - Zong, W. H.

AU - You, Li Ping

PY - 1999/12/6

Y1 - 1999/12/6

N2 - Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO2) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO2 film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640-680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO2 layers.

AB - Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO2) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO2 film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640-680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO2 layers.

UR - http://www.scopus.com/inward/record.url?scp=0037556038&partnerID=8YFLogxK

U2 - 10.1063/1.125410

DO - 10.1063/1.125410

M3 - Article

AN - SCOPUS:0037556038

SN - 0003-6951

VL - 75

SP - 3629

EP - 3631

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Electroluminescence from Au/(nanoscale Ge/nanoscale SiO₂) superlattices/p-Si

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