Electrical and optical properties of InSe with various interfaces

Lili Zhou; Yanhui Lv; Yue Zhao; Gang Wu; Peiyao Xiao; Jiung Cho; Miri Choi; Cormac Ó Coileáin; Ching Ray Chang; Han Chun Wu

doi:10.1063/5.0090684

Electrical and optical properties of InSe with various interfaces

Lili Zhou, Yanhui Lv, Yue Zhao, Gang Wu, Peiyao Xiao, Jiung Cho, Miri Choi, Cormac Ó Coileáin^*, Ching Ray Chang, Han Chun Wu^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, we investigated how the electrical and photoelectrical properties of InSe based devices depend on the interfaces made with standard materials such as SiO2, BN, and PMMA. The use of a BN layer is found to not only change the carrier type but also weaken the out-of-plane vibration of InSe. Field-effect transistor devices show a p-type behavior for InSe on SiO2, while for InSe on BN, the majority carriers are electrons. Moreover, due to the weakened electron-phonon interaction the electron mobility of InSe on BN is more than two magnitudes greater than its hole mobility on SiO2. A p-n junction diode is also demonstrated with InSe/SiO2 and InSe/BN with a rectification ratio as high as 102 and a photoresponsivity of 52 A/W, which can be enhanced to 103 and 1.6 × 104 A/W with a PMMA coverlayer. Our results may be useful for the design of high-performance van der Waals heterojunction photodetectors.

Original language	English
Article number	A98
Journal	Applied Physics Letters
Volume	121
Issue number	7
DOIs	https://doi.org/10.1063/5.0090684
Publication status	Published - 15 Aug 2022

Access to Document

10.1063/5.0090684

Cite this

@article{2a9864d9c4764affa74e4d427e5173b1,

title = "Electrical and optical properties of InSe with various interfaces",

abstract = "In this work, we investigated how the electrical and photoelectrical properties of InSe based devices depend on the interfaces made with standard materials such as SiO2, BN, and PMMA. The use of a BN layer is found to not only change the carrier type but also weaken the out-of-plane vibration of InSe. Field-effect transistor devices show a p-type behavior for InSe on SiO2, while for InSe on BN, the majority carriers are electrons. Moreover, due to the weakened electron-phonon interaction the electron mobility of InSe on BN is more than two magnitudes greater than its hole mobility on SiO2. A p-n junction diode is also demonstrated with InSe/SiO2 and InSe/BN with a rectification ratio as high as 102 and a photoresponsivity of 52 A/W, which can be enhanced to 103 and 1.6 × 104 A/W with a PMMA coverlayer. Our results may be useful for the design of high-performance van der Waals heterojunction photodetectors.",

author = "Lili Zhou and Yanhui Lv and Yue Zhao and Gang Wu and Peiyao Xiao and Jiung Cho and Miri Choi and {{\'O} Coile{\'a}in}, Cormac and Chang, {Ching Ray} and Wu, {Han Chun}",

note = "Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = aug,

day = "15",

doi = "10.1063/5.0090684",

language = "English",

volume = "121",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Electrical and optical properties of InSe with various interfaces

AU - Zhou, Lili

AU - Lv, Yanhui

AU - Zhao, Yue

AU - Wu, Gang

AU - Xiao, Peiyao

AU - Cho, Jiung

AU - Choi, Miri

AU - Ó Coileáin, Cormac

AU - Chang, Ching Ray

AU - Wu, Han Chun

PY - 2022/8/15

Y1 - 2022/8/15

N2 - In this work, we investigated how the electrical and photoelectrical properties of InSe based devices depend on the interfaces made with standard materials such as SiO2, BN, and PMMA. The use of a BN layer is found to not only change the carrier type but also weaken the out-of-plane vibration of InSe. Field-effect transistor devices show a p-type behavior for InSe on SiO2, while for InSe on BN, the majority carriers are electrons. Moreover, due to the weakened electron-phonon interaction the electron mobility of InSe on BN is more than two magnitudes greater than its hole mobility on SiO2. A p-n junction diode is also demonstrated with InSe/SiO2 and InSe/BN with a rectification ratio as high as 102 and a photoresponsivity of 52 A/W, which can be enhanced to 103 and 1.6 × 104 A/W with a PMMA coverlayer. Our results may be useful for the design of high-performance van der Waals heterojunction photodetectors.

AB - In this work, we investigated how the electrical and photoelectrical properties of InSe based devices depend on the interfaces made with standard materials such as SiO2, BN, and PMMA. The use of a BN layer is found to not only change the carrier type but also weaken the out-of-plane vibration of InSe. Field-effect transistor devices show a p-type behavior for InSe on SiO2, while for InSe on BN, the majority carriers are electrons. Moreover, due to the weakened electron-phonon interaction the electron mobility of InSe on BN is more than two magnitudes greater than its hole mobility on SiO2. A p-n junction diode is also demonstrated with InSe/SiO2 and InSe/BN with a rectification ratio as high as 102 and a photoresponsivity of 52 A/W, which can be enhanced to 103 and 1.6 × 104 A/W with a PMMA coverlayer. Our results may be useful for the design of high-performance van der Waals heterojunction photodetectors.

UR - http://www.scopus.com/inward/record.url?scp=85137101786&partnerID=8YFLogxK

U2 - 10.1063/5.0090684

DO - 10.1063/5.0090684

M3 - Article

AN - SCOPUS:85137101786

SN - 0003-6951

VL - 121

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - A98

ER -

Electrical and optical properties of InSe with various interfaces

Abstract

Access to Document

Other files and links

Fingerprint

Cite this