Crystallization behavior and ferroelectric properties of PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 sandwich thin film on Pt/Ti/SiO2/Si substrates

Shaobo Liu*, Yanqiu Li, Meidong Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO2/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystalline more favorably with the addition of a PbTiO3 layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristics curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10-6 Acm-2, 2.46 μCcm-2, and 41 kVcm-1, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.

Original languageEnglish
Pages (from-to)1085-1089
Number of pages5
JournalJournal of Electronic Materials
Volume32
Issue number10
DOIs
Publication statusPublished - Oct 2003
Externally publishedYes

Keywords

  • Dielectric properties
  • Ferroelectric properties
  • Sol-gel
  • X-ray diffraction

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Liu, S., Li, Y., & Liu, M. (2003). Crystallization behavior and ferroelectric properties of PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 sandwich thin film on Pt/Ti/SiO2/Si substrates. Journal of Electronic Materials, 32(10), 1085-1089. https://doi.org/10.1007/s11664-003-0092-4