Abstract
Based on the Fowler-Nordheim tunneling theory at high electric fields, a model of carriers recombination in organic double-layer light-emitting diodes is presented in this paper. We provide the formula expressions of the carriers recombination current density as function of factors such as the injection barrier, anodic electric field and thickness ratio of cathodic layer to anodic layer, and discuss the influence of these factors on the recombination current density and recombination efficiency. Being in accord with the experiments very well, we find it is reasonable to elucidate the controlling role of electric field on recombination region.
| Original language | English |
|---|---|
| Pages (from-to) | 267-273 |
| Number of pages | 7 |
| Journal | Chemical Physics |
| Volume | 274 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 15 Dec 2001 |
| Externally published | Yes |
Keywords
- Bilayer organic light-emitting diodes
- Charge carriers
- Fowler-Nordheim tunneling
- High electric fields