Abstract
A robust micro-electro-mechanical systems (MEMS) infrared thin film transducer of an ultra-large-scale array was proposed and fabricated on a 4-inch silicon wafer. The silicon substrate and micro cavities were introduced. This novel transducer had excellent mechanical stability, time response, and state-of-the-art pixel scale. It could bear a load of 1700 g and its load pressure was improved by more than 5.24 times and time constant decreased by 50.7% compared to the traditional soft infrared thin film transducer. The array scale of its pixels exceeded 2k × 2k. The simulation and measured results of the transient temperature and radiation intensity were well consistent. Illuminated by a 532 nm laser with a frequency of 50 Hz and 50% duty cycle, the thermal decay time of the proposed transducer was 6.0 ms. A knife-edge image was utilized for spatial resolution test and the full width at half maximum (FWHM) of the proposed transducer was 24% smaller than the traditional soft one. High-resolution infrared images were generated using the proposed robust transducer. These results proved that the robust transducer was promising in infrared image generation.
Original language | English |
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Article number | 6807 |
Pages (from-to) | 1-21 |
Number of pages | 21 |
Journal | Sensors |
Volume | 20 |
Issue number | 23 |
DOIs | |
Publication status | Published - 1 Dec 2020 |
Keywords
- Infrared image generation
- Infrared transducer
- Silicon micro cavities
- Ultra-large-scale array