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A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier with 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI
Jian Zhang*, Dawei Wang, Wei Zhu, Ming Zhai, Xiangjie Yi, Yan Wang
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
3
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(Scopus)