A comparison study of tantalum-nitrogen and chromium absorber in extreme ultraviolet mask fabrication using electron-beam lithography simulation

Zhao Guorong, Li Yanqiu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

EUVL will be a most likely candidate for the next generation lithography beyond 32nm node. The proper material of Extreme Ultraviolet ( EUV ) mask absorber is crucial. Many researches indicated that tantalum-nitrogen (TaN) and chromium (Cr) are the better candidates. However, these studies mainly focus on the optical performance. Researchers pay little attention to the influence of absorber material on mask fabrication by Electron Beam Lithography (EBL). In this paper, using an EBL module of in house software MicroCruiser, the study of comparison of the influence of TaN and Cr absorber on EUV mask fabrication is presented from the perspective of the backscattering coefficient, the energy deposition of BE in resist, the line edge roughness of patter profile, and the side wall angle of the pattern profile, respectively. An EBL module of MicroCruiser is developed including complex inelastic scattering and relativistic correction of high energy electron which were not considered in previous simulation software of EBL.

Original languageEnglish
Title of host publicationPhotomask and Next-Generation Lithography Mask Technology XIV
EditionPART 2
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventPhotomask and Next-Generation Lithography Mask Technology XIV - Yokohama, Japan
Duration: 17 Apr 200719 Apr 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
NumberPART 2
Volume6607
ISSN (Print)0277-786X

Conference

ConferencePhotomask and Next-Generation Lithography Mask Technology XIV
Country/TerritoryJapan
CityYokohama
Period17/04/0719/04/07

Keywords

  • Absorber
  • Chromium(Cr)
  • Electron beam lithography (EBL)
  • Extreme ultraviolet lithography (EUVL)
  • Mask
  • Tantalum-nitrogen(TaN)

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Guorong, Z., & Yanqiu, L. (2007). A comparison study of tantalum-nitrogen and chromium absorber in extreme ultraviolet mask fabrication using electron-beam lithography simulation. In Photomask and Next-Generation Lithography Mask Technology XIV (PART 2 ed.). Article 66073C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6607, No. PART 2). https://doi.org/10.1117/12.729031