A 110-160GHz Wideband Power Amplifier in 0.13μm SiGe BiCMOS with 14.12dBm Psat and 9.26% PAE

Liang Zhao, Yao Li, Weihua Yu*, Xin Lv

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

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