He has been engaged in computational materials chemistry for a long time, and is good at first-principles calculation, molecular dynamics, machine learning and phase-field theory simulation methods. He has a deep understanding of the growth mechanism and property regulation of nanomaterials, and proposed a universal scheme to grow single crystal two-dimensional materials using low-symmetry substrate epitaxy, which has been widely used in the preparation of wafer-level single crystal materials.

1. Epitaxial growth mechanism and layer number regulation mechanism of two-dimensional materials such as graphene, hexagonal boron nitride (hBN) and transition metal sulfide (TMDC);
2. Non-epitaxial growth mechanism of semiconductor nanomaterials;
3. Structure-activity relationship of material synthesis, structure and property.

2017.03-2021.02 Ulsan Advanced Institute of Science and Technology (UNIST), Materials Science and Engineering, Doctor of Engineering
2013.09-2016.06 Shandong University, Major in Materials Engineering, Master of Engineering
2009.09-2013.07 Kunming University of Science and Technology, Major in Materials Science and Engineering, Bachelor of Engineering

2022.09-present School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Professor
2021.03-2022.08 Postdoctoral Fellow, Center for Multidimensional Carbon Materials, Korea Institute of Basic Science
2016.10-2017.02 Korea Institute of Basic Science, Multidimensional Carbon Materials Center, Researcher

So far, he has published more than 20 academic papers in academic journals and conferences at home and abroad, among which he was the first/co-author of 2 papers in Nature, Nat. Commun., Chem. Rev., Adv. Funct. Mater. He has published 12 papers in other journals, as a collaborator in Science, Nat.Commun., J.Am.Chem.Soc. He has published many papers in Adv. Mater.
Representative Papers
1. K. Ma#, L. Zhang#, S. Jin, Y. Wang, S. Yoon. H. Hwang, J. Oh, D. Jeong, M. Wang, S. Chatterjee, G. Kim, A. Jang, J. Yang, S. Ryu, H. Jeong, R. Ruoff*, M. Chhowalla*, F. Ding*, and H. Shin*. Epitaxial Single-Crystal Hexagonal Boron Nitride Multi-Layers on Ni (111). Nature 2022, 606, 88-93.
2. L. Wang#, X. Xu#, L. Zhang#, R. Qiao#, M. Wu, Z. Wang, S. Zhang, J. Liang, Z. Zhang, Z. Zhang, W. Chen, X. Xie, J. Zong, Y. Shan, Y. Guo, M. Willinger, H. Wu, Q. Li, W. Wang, P. Gao, S. Wu, Y. Zhang, Y. Jiang, D. Yu, E. Wang, X. Bai*, Z.-J. Wang*, F. Ding*, K. Liu*. Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper. Nature 2019, 570, 91-95. (Highly cited articles)
3. L. Zhang, P. Peng, F. Ding*. Epitaxial Growth of Two-dimensional Materials on High-Index Substrate Surfaces. Adv. Funct. Mater. 2021,31, 2100503.
4. L. Zhang#, J. Dong#, F. Ding*. Strategies, Status and Challenges in Wafer Scale Single Crystalline Two-dimensional Materials Synthesis. Chem. Rev. 2021, 121, 6321-6372. (Cover article)
5. X. Li#, G. Wu#, L. Zhang#, D. Huang, Y. Li, R. Zhang, M. Li, L. Zhu, J. Guo, T. Huang, J. Shen, X. Wei, K. Yu, J. Dong, M. Altman, R. Ruoff, Y. Duan, J.Yu, Z. Wang, X. Huang*, F. Ding*, H. Shi*, W. Tang. Single-Crystal Two-Dimensional Material Epitaxy on Tailored Non-Single-Crystal Substrates. Nat. Commun. 2022, 13, 1773.
6. L. Zhang, F. Ding*. Mechanism of Corrugated Graphene Moire Superstructures on Transition-Metal Surfaces. ACS Appl. Mater. Interfaces. 13, 56674.
7. L. Zhang, J. Dong, Z. Guan, X. Zhang, F. Ding*. The alignment-dependent properties and applications of graphene moire superstructures on the Ru(0001) surface. Nanoscale. 12, 12831-12839.
8. L. Zhang, F. Ding*. The stable interfaces between various edges of hBN and step edges of Cu surface in hBN epitaxial growth: A comprehensive theoretical exploration. 2D Mater. 8, 034004.
9. H. Sun, # F. Liu#, L. Zhang#, K. Ko#, B. McLean, H. An, S. Kim, M. Huang, M. Willinger, R. Ruoff, J. Suh*, Z. Wang*, F. Ding*. Bottom-up Growth of Graphene Nanospears and Nanoribbons. Adv. Funct. Mater. 2022,2206961.
10. J. Dong#, L. Zhang#, B. Wu, F. Ding, Y. Liu*. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J. Phys. Chem. Lett. 12, 7942-7963.
11. J. Dong, L. Zhang, X. Dai, F. Ding*. The epitaxy of 2D materials growth. Nat. Commun. 2020, 11, 5862.
12. S. Jin, M. Huang, Y. Kwon, L. Zhang, B.-W. Li, S. Oh, J. Dong, D. Luo, M. Biswal, B. V. Cunning, P. V. Bakharev, I. Moon, W. J. Yoo, D. C. Camacho-Mojica, Y.-J. Kim, S. H. Lee, B. Wang, W. K. Seong, M. Saxena, F. Ding, H.-J. Shin*, R. S. Ruoff*. Colossal grain growth yields single-crystal metal foils by contact-free annealing. Science 2018, 362, 1021-1025.