Ultrathin Rare-Earth-Doped MoS2 Crystalline Films Prepared with Magnetron Sputtering and Ar + H2 Post-Annealing

Chenglin Heng, Xuan Wang, Chaonan Zhao, Gang Wu, Yanhui Lv, Hanchun Wu, Ming Zhao, Terje G. Finstad*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

2 引用 (Scopus)

摘要

In this work, we propose a method to prepare large-area, crystalline ultrathin rare-earth (RE, i.e., Eu, Yb, Er and Tb)-doped MoS2 thin films, using magnetron sputtering and subsequent Ar + H2 annealing. The film thickness of as-deposited samples varied from 60 to 100 nm, and decreases to be below 10 nm after annealing at 550 °C for 30 min. X-ray diffraction and Raman spectra analysis revealed that the sample films were crystallized after the annealing, which resulted in a MoS2 crystallite size of about 4–5 nm. X-ray photoelectron spectroscopy indicated that most of the RE ions existed in the films in trivalent states. The optical bandgap of the RE-doped MoS2 samples decreased from 1.6 eV (undoped) to 1.3 eV (Eu-doped) in the UV-vis absorption spectra. Electrical measurements showed that the electrical resistance decreased from 9.13 MΩ (undoped) to 0.34 MΩ (Yb-doped), the carrier density increased by one to two orders of magnitude and the carrier mobility decreased from 5.4 cm2/V·s (undoped) to 0.65 cm2/V·s (Yb-doped). The sign of the Hall coefficients indicated that the undoped MoS2 and the Yb-, Tb- and Er-doped MoS2 samples were n-type semiconductors, while the Eu-doped sample showed p-type characteristics. This study may be helpful to broaden the photoelectronic applications of these two-dimensional materials.

源语言英语
文章编号308
期刊Crystals
13
2
DOI
出版状态已出版 - 2月 2023

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