Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films

Yu Qi Wang, Xu Wu, Yan Feng Ge, Ye Liang Wang*, Haiming Guo, Yan Shao, Tao Lei, Chen Liu, Jia Ou Wang, Shi Yu Zhu, Zhong Liu Liu, Wei Guo, Kurash Ibrahim, Yu Gui Yao, Hong Jun Gao

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

9 引用 (Scopus)

摘要

2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.

源语言英语
文章编号1600324
期刊Advanced Electronic Materials
2
12
DOI
出版状态已出版 - 1 12月 2016

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