摘要
2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.
源语言 | 英语 |
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文章编号 | 1600324 |
期刊 | Advanced Electronic Materials |
卷 | 2 |
期 | 12 |
DOI | |
出版状态 | 已出版 - 1 12月 2016 |