Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films

Yu Qi Wang; Xu Wu; Yan Feng Ge; Ye Liang Wang; Haiming Guo; Yan Shao; Tao Lei; Chen Liu; Jia Ou Wang; Shi Yu Zhu; Zhong Liu Liu; Wei Guo; Kurash Ibrahim; Yu Gui Yao; Hong Jun Gao

doi:10.1002/aelm.201600324

Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe₃ Films

Yu Qi Wang, Xu Wu, Yan Feng Ge, Ye Liang Wang^*, Haiming Guo, Yan Shao, Tao Lei, Chen Liu, Jia Ou Wang, Shi Yu Zhu, Zhong Liu Liu, Wei Guo, Kurash Ibrahim, Yu Gui Yao, Hong Jun Gao

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe₃ film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe₃ film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.

Original language	English
Article number	1600324
Journal	Advanced Electronic Materials
Volume	2
Issue number	12
DOIs	https://doi.org/10.1002/aelm.201600324
Publication status	Published - 1 Dec 2016

Keywords

2D materials
HfTe
electronic structures
transition-metal-trichalcogenide

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10.1002/aelm.201600324

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title = "Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films",

abstract = "2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.",

keywords = "2D materials, HfTe, electronic structures, transition-metal-trichalcogenide",

author = "Wang, {Yu Qi} and Xu Wu and Ge, {Yan Feng} and Wang, {Ye Liang} and Haiming Guo and Yan Shao and Tao Lei and Chen Liu and Wang, {Jia Ou} and Zhu, {Shi Yu} and Liu, {Zhong Liu} and Wei Guo and Kurash Ibrahim and Yao, {Yu Gui} and Gao, {Hong Jun}",

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doi = "10.1002/aelm.201600324",

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AU - Wang, Yu Qi

AU - Wu, Xu

AU - Ge, Yan Feng

AU - Wang, Ye Liang

AU - Guo, Haiming

AU - Shao, Yan

AU - Lei, Tao

AU - Liu, Chen

AU - Wang, Jia Ou

AU - Zhu, Shi Yu

AU - Liu, Zhong Liu

AU - Guo, Wei

AU - Ibrahim, Kurash

AU - Yao, Yu Gui

AU - Gao, Hong Jun

PY - 2016/12/1

Y1 - 2016/12/1

N2 - 2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.

AB - 2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.

KW - 2D materials

KW - HfTe

KW - electronic structures

KW - transition-metal-trichalcogenide

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ER -

Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe₃ Films

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Keywords

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