@inproceedings{4a7197b94c314adf9d1fc2352c1574fb,
title = "The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides",
abstract = "We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N2, strong PL were observed from Eu and Yb3+ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 °C) while the Eu2+ emission is dominating for annealing at 1000 °C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence.",
keywords = "Energy transfer, Eu, Luminescence, Rare earth compounds, Silicon rich oxide, Yb",
author = "Heng, {Cheng Lin} and Su, {Wen Yong} and Zhang, {Q. W.} and Ren, {X. Q.} and Yin, {P. G.} and Pan, {H. P.} and Yao, {S. D.} and Finstad, {Terje G.}",
year = "2014",
doi = "10.4028/www.scientific.net/AMR.936.207",
language = "English",
isbn = "9783038351023",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications Ltd.",
pages = "207--211",
booktitle = "Materials Science and Engineering Technology",
address = "Switzerland",
note = "2014 International Conference on Materials Science and Engineering Technology, MSET 2014 ; Conference date: 28-06-2014 Through 29-06-2014",
}