The Effects of N2O and NH3 Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors

The Effects of N₂O and NH₃ Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors

Xuyang Li, Jin Cheng, Zhinong Yu

科研成果: 期刊稿件 › 会议文章 › 同行评审

源语言	英语
页（从-至）	798
页数	1
期刊	Digest of Technical Papers - SID International Symposium
卷	50
期	S1
DOI	https://doi.org/10.1002/SDTP.13651
出版状态	已出版 - 2019
活动	International Conference on Display Technology, ICDT 2019 - Suzhou, 中国期限: 26 3月 2019 → 29 3月 2019

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title = "The Effects of N2O and NH3 Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors",

author = "Xuyang Li and Jin Cheng and Zhinong Yu",

year = "2019",

doi = "10.1002/SDTP.13651",

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note = "International Conference on Display Technology, ICDT 2019 ; Conference date: 26-03-2019 Through 29-03-2019",

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AU - Li, Xuyang

AU - Cheng, Jin

AU - Yu, Zhinong

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SN - 0097-966X

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SP - 798

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S1

T2 - International Conference on Display Technology, ICDT 2019

Y2 - 26 March 2019 through 29 March 2019

ER -