The Effects of N2O and NH3 Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors

Xuyang Li; Jin Cheng; Zhinong Yu

doi:10.1002/SDTP.13651

The Effects of N₂O and NH₃ Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors

Xuyang Li, Jin Cheng, Zhinong Yu

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	798
Number of pages	1
Journal	Digest of Technical Papers - SID International Symposium
Volume	50
Issue number	S1
DOIs	https://doi.org/10.1002/SDTP.13651
Publication status	Published - 2019
Event	International Conference on Display Technology, ICDT 2019 - Suzhou, China Duration: 26 Mar 2019 → 29 Mar 2019

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10.1002/SDTP.13651

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title = "The Effects of N2O and NH3 Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors",

author = "Xuyang Li and Jin Cheng and Zhinong Yu",

year = "2019",

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volume = "50",

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journal = "Digest of Technical Papers - SID International Symposium",

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publisher = "John Wiley and Sons Inc.",

number = "S1",

note = "International Conference on Display Technology, ICDT 2019 ; Conference date: 26-03-2019 Through 29-03-2019",

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T1 - The Effects of N2O and NH3 Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors

AU - Li, Xuyang

AU - Cheng, Jin

AU - Yu, Zhinong

PY - 2019

Y1 - 2019

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U2 - 10.1002/SDTP.13651

DO - 10.1002/SDTP.13651

M3 - Conference article

AN - SCOPUS:85134266485

SN - 0097-966X

VL - 50

SP - 798

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S1

T2 - International Conference on Display Technology, ICDT 2019

Y2 - 26 March 2019 through 29 March 2019

ER -

The Effects of N2O and NH3 Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors

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The Effects of N₂O and NH₃ Plasma Treatment on the Device Performance of Solution-Processed Thin Film Transistors